Process Technology for Semiconductor Lasers
Crystal Growth and Microprocesses
Published on 21. December 2011
Book
Paperback/Softback
X, 169 pages
978-3-642-79578-7 (ISBN)
Description
Process Technology for Semiconductor Lasers
describes the design principles of semiconductor lasers, mainly from the fabrication point of view. A review is given of the history of semiconductor-laser development and applications and of the materials used in lasing at short to long wavelengths. The basic design principles for semiconductor-laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies. The characterizations of laser materials and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.
More details
Series
Edition
Softcover reprint of the original 1st ed. 1996
Language
English
Place of publication
Berlin
Germany
Publishing group
Springer Berlin
Target group
Professional and scholarly
Research
Illustrations
X, 169 p.
Dimensions
Height: 235 mm
Width: 155 mm
Thickness: 11 mm
Weight
295 gr
ISBN-13
978-3-642-79578-7 (9783642795787)
DOI
10.1007/978-3-642-79576-3
Schweitzer Classification
Other editions
Additional editions
Kenichi Iga | Susumu Kinoshita
Process Technology for Semiconductor Lasers
Crystal Growth and Microprocesses
Book
01/1996
1st Edition
Springer
€85.55
Article exhausted; check different version
Content
1. Introduction.- 1.1 Outline of Semiconductor Laser Theory.- 1.2 Semiconductor Lasers in Opto-electronics.- 1.3 Necessary Technology for Semiconductor Lasers.- 1.4 Brief History of Semiconductor Lasers.- 1.5 Typical Semiconductor Lasers.- 2. Materials for Semiconductor Lasers.- 2.1 III-V Compound Semiconductors.- 2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers.- 2.3 Crystals for Semiconductor Lasers with 1-µm and Longer Emission Wavelengths.- 3. Basic Design of Semiconductor Lasers.- 3.1 Double Heterostructures and Their Design.- 4. Epitaxy of III-V Compound Semiconductors.- 4.1 III-V Substrates for Semiconductor Lasers.- 4.2 Bulk Growth Techniques.- 4.3 Heteroepitaxial Techniques.- 5. Liquid Phase Epitaxy and Growth Technology.- 5.1 Outline of an LPE System.- 5.2 Reactors.- 5.3 Loading Sub-System.- 5.4 Pump and Exhaust Sub-System.- 5.5 Gas-Flow Sub-System.- 5.6 Heating Sub-System.- 5.7 Maintenance.- 5.8 Liquid-Phase Epitaxy.- 5.9 LPE Process.- 6. Vapor Phase and Beam Epitaxies.- 6.1 Metal-Organic Chemical Vapor Deposition (MOCVD).- 6.2 Molecular-Beam and Chemical-Beam Epitaxy.- 7. Characterization of Laser Materials.- 7.1 Evaluation of Laser Wafers.- 7.2 Measurement of Lattice Mismatch.- 7.3 Measurement of the Impurity Concentration.- 7.4 Photoluminescence.- 7.5 Measurement of the Refractive Index.- 7.6 Misfit Dislocation.- 8. Semiconductor-Laser Devices - Fabrication and Characteristics.- 8.1 Fabrication of Fundamental Laser Devices.- 8.2 Current Injection and Contacts.- 8.3 Evaluation of the Threshold-Current Density.- 8.4 Gain Bandwidth and Oscillation Spectra.- 8.5 Output and Efficiency of Semiconductor Lasers.- 8.6 Near-Field Pattern and Far-Field Pattern.- 8.7 Temperature Characteristics.- 8.8 Reliability.- 9. Mode-ControlTechniques in Semiconductor Lasers.- 9.1 Transverse-Mode Characteristics and the Single-Mode Condition.- 9.2 Longitudinal-Mode Control.- 9.3 Burying Epitaxy on Mesas and V-Grooves.- 9.4 Mass-Transport Technique.- 9.5 Selective Meltback Technique.- 9.6 Overgrowth on Gratings.- 9.7 Growth of Quantum Wells.- 9.8 Growth of Multilayer Bragg Mirrors.- 10. Surface-Emitting Lasers.- 10.1 The Concept of Surf ace-Emitting Lasers.- 10.2 Structure and Characteristics.- 10.3 Semiconductor Multi-Layer Structure.- 10.4 Two-Dimensional Arrays.- 10.5 Ultralow-Threshold Devices.- 10.6 Future Prospects.- References.