Bsim4 And Mosfet Modeling For Ic Simulation

BSIM and IC Simulation: Circuit Simulation and Compact Models; BSIM - The Beginning; BSIM3 - A Compact Model Based on New MOSFET Physics; BSIM3v3 - World's First MOSFET Standard Model; BSIM4 - Aimed for 130nm Down to 20nm Nodes; BSIM SOI; Impact of BSIM; Looking Towards the Future - The Multi-Gate MOSFET Model; The Intent of This Book; Fundamental MOSFET Physical Effects and Their Models for BSIM4: Introduction and Chapter Objectives; Gate and Channel Geometries and Materials; Temperature-Dependence Model Options; Threshold Voltage; Poly-Silicon Gate Depletion; Bulk-Charge Effects; LDD Resistances; Finite Charge Thickness; Effective Mobility; Layout-Dependent Effects: Mechanical Stress and Proximity Effects; Chapter Summary; Parameter Table; Channel DC Current and Output Resistance: Introduction and Chapter Objectives; Channel Current Theory; Single Continuous Channel Charge Model; Channel Current in Subthreshold and Linear Operations; Velocity Saturation and Velocity Overshoot; Output Resistance in Saturation Region; Source-End Velocity Limit; Chapter Summary; Parameter Table; Gate Direct-Tunneling and Body Currents: Introduction and Chapter Objectives; Gate Direct-Tunneling Current Theory and Model; Body Currents; Summary of BSIM4 Branch and Terminal DC Currents; Chapter Summary; Parameter Table; Charge and Capacitance Models: Introduction and Chapter Objectives; MOSFET Capacitance Theory; Intrinsic Charge and Capacitance Models; Fringing and Overlap Capacitances; Chapter Summary; Parameter Table; Non-Quasi-Static and Parasitic Gate and Body Resistances: Introduction and Chapter Objectives; Gate Electrode Resistance; Gate Intrinsic-Input Resistance for Non-Quasi-Static Modeling; Charge-Deficit Transient and AC NQS Models; Body Resistance Network; Chapter Summary; Parameter Table; Noise Models: Introduction and Chapter Objectives; Noise Representations and Parameters; BSIM4 Flicker Noise Models; BSIM4 Channel Thermal Noise Models; Other Noise Sources; Chapter Summary; Parameter Table; Source and Drain Parasitics: Layout-Dependence Model: Introduction and Chapter Objectives; Connections of a Multi-Transistor Stack; Source and Drain of a Transistor With Multiple Gate Fingers; GEOMOD: The End-Source and End-Drain of a Multi-Finger Transistor; Source and Drain Area and Perimeter Calculation; Saturation Junction Leakage Current and Zero-Bias Capacitance Models; Source and Drain Contact Scenarios and Diffusion Resistances; RGEOMOD: Selecting A Source and Drain Contact Scenario for GEOMOD; Chapter Summary; Parameter Table; Junction Diode IV and CV Models: Introduction and Chapter Objectives; Physical Mechanisms of Diode DC Currents; BSIM4 Diode DC IV Model [4]; BSIM4 Junction Leakage Due to Trap-Assisted Tunneling [4]; BSIM4 Diode Charge and Capacitance [4]; Diode Temperature-Dependence Model [4]; Chapter Summary; Parameter Table; SPICE Implementation Example: The Methodology with BSIM4 Transient NQS: Introduction and Chapter Objectives; Review of the Charge-Deficit Transient NQS Model; Time Discretization, Equation Linearization and Matrix Stamping; Composite Stamps for Transient NQS Model; Bypass; Convergence Checking; Chapter Summary; Multi-Gate Transistor Model: Introduction and Chapter Objectives; Advantages of FinFETs Over Planar CMOS; BSIM-CMG; Model Validation; Chapter Summary.