Defects in Semiconductors 17

Defects in Heterogeneous Solids - From Microphysics to Macrophysics
35 Years of Defects in Semiconductors: What Next?
Optical Spectroscopy of Defects in Diamond: Current Understanding and Future Problems
Isotope Dependence of the Frequency of Localized Vibrational Modes in Diamond
Native Paramagnetic Defects in Diamond Films
Titanium Impurity in Diamond
Theory of Nitrogen Aggregates in Diamond: The H3 and H4 Defects
Nitrogen and Nitrogen-Vacancy Complexes in Diamond
Time Resolved Photoluminescence and Optically Detected Magnetic Resonance Investigations on Synthetic Diamond
Endor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiC
Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)
Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide
Boron in Cubic Silicon Carbide: Dynamic Effects in ESR
ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
Iron Acceptors in Gallium Nitride (GaN)
Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study
The Bound Exciton Model for Isoelectronic Centers in Silicon
Near-Surface Reactions of Gold and Silver in Silicon
A New Photoluminescent Center in Mercury-Doped Silicon
Electrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon
Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related Centers
Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A ?-NMR Study on the Fermi-Level Dependence
EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon
Role of Point Defects in Oxygen Agglomeration in Si
DLTS Studies of Thermally Treated Carbon-Rich Silicon
A Metastable Selenium-Related Center in Silicon
The Excited 5T1 State of the Feio -Center in Silicon
Identification of the Iron-Boron Line Spectrum in Silicon
Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon
On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
Detection of Defects Responsible for Lifetime in p-Type Si
Spin Dependent Photoconductivity in Silicon-on-Sapphire
Group-V Antisite Defects, VGa , in GaAs
Electronic Structure of PIn Antisite in InP
On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers
Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
Incorporation of Be Into Inx Ga1-x As (0.004?x?0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide
Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
Nitrogen-Hydrogen Complexes in GaP and GaAs
Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As
Defects in Electron Irradiated GaP and GaInP
Positron Lifetime Investigations of Electron Irradiated InP
Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
Fine Structure of the (Fe2+, h) Bound States in GaP and InP
New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S
New Aspects of (Semi-Insulating) GaP:Cu
Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials
Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under Photoexcitation
Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation
Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide
Electron and Hole Traps in AlAs p+-n Junctions Grown by MBE
Frenkel Pairs in GaAs and InP
Lattice Properties of GaAs Layers Grown by MBE Method at Low Temperature
Semiconductor Luminescence and Effects of Excitation Transfer
Doping of Wide-Gap II-VI Compounds for Short-Wavelength Visible Light Emitting Devices
Metal Vacancies in Li and In Doped ZnSe and CdS
The Identification of Intrinsic Vacancy Defects in CdTe
Photoluminescence and Optically Detected Magnetic Resonance Investigations on the Indium A-Center in CdTe:In
Indium Donor Complexes with Cation Vacancies in CdTe and ZnSe
Energy Transfer between Fe2+ Centers in Polymorphic ZnS
Electron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTe
Frenkel Pairs on the Te Sublattice of ZnTe? An ODMR Study
Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation
Optical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te
Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te
Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds
Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO
Metal Vacancies in Li and In Doped ZnSe and CdS
A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers
Defect Control in Relaxed, Graded GeSi/Si
Origin of Mosaic Structure in Relaxed Si1-xGex Layers
Point Defects in SiGe Epitaxial Layers and Bulk Crystals
Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy
Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence
Strain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-Implantation
Rapid Thermal Annealing of Ion Implanted Strained Si1-xGex
Diffusion, Interface Mixing and Schottky Barrier Formation
Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs
1D Properties of Straight Dislocation Segments in Si and Ge
Metastable Surface Defects in p-Type GaAs
Raman Study of Misfit Dislocations in ZnSe/GaAs Structures
Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen
Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements
Spatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEM
Coulomb Energy of Traps in Semiconductor Space Charge Regions
Effect of Interface on Capture and Emission Processes via Deep Centers
Heteroepitaxy of GaAs on Porous Silicon: The Structure of the Interface
Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset
Impurity-Enhanced Disordering in Superlattices
Exciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending Investigation
Thermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum Wells
Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells
Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures
DX Centers in Reduced Dimensionality n-Type AlGaAs Structures
Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells
Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces
Influence of DX Center Structure on Si Modulation ?-Doping in AlGaAs/GaAs Quantum Wells
Si Diffusion out of ?-Planes in a GaAs Superlattice
Luminescence of a Delta Doping Related Exciton in GaAs:Si
Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si ?-Doped GaAs
Electronic States of n-Type ?-Doping in GaAs Heterostructures
Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si
High Spectral Resolution Study of Shallow Donors in GaInAs
The Influence of Spin and Composition Fluctuations on Shallow Donor States in Semimagnetic Semiconductors
Sc Impurity in CdSe and Cd1-xMnxSe
The Theory of Rare-Earth Impurities in Semiconductors
The Physics and Application of Si:Er for Light Emitting Diodes
PL and EPR Studies of Er-Implanted FZ- and CZ-Si
Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds
Efficiency of Rare Earth Intra-4f-Shell Luminescence in InP
Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room Temperature
Energy Levels and Excitation Mechanisms of Yb3+ Ions in InP1-xAsx Alloys
Time Decay Study of the Er3+-Related Luminescence in In1-xGaxP
Er-4f Luminescence Excitation and Quenching Mechanisms in GaAs
Photoluminescence Study of the 779-meV Band in Silver-Doped Silicon
Diffusion and Electrical Properties of 3d Transition-Metal Impurity Series in Silicon
Lattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in Semiconductor
Photoluminescence from Silver-Related Defects in Silicon
Electronic Structure of Copper-Related Defects in Germanium
Thermodynamic Properties of Self-Interstitials in Silicon: An Experimental Investigation
Shallow Bound Pseudoacceptor States of Iron in Gallium Phosphide
An Optical Zeeman Study on Fe3+ in GaAs and InP
Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon
Nonlinear Zeeman Splitting and Electron-Phonon Coupling
Hydrogen-Gold-Related Deep Levels in Crystalline Silicon
In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Moessbauer Spectroscopy Study
Studies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:Cr
Characterization of Defects in Li-Diffused n-Type GaAs
Observation and Theory of the H2* Defect in Silicon
EPR Identification of Hydrogen Molecules in Bulk Silicon
Hydrogen Solubility and Defects in Silicon
Diffusion of Charged Hydrogen in Semiconductors
Metastable Defects in N-Type GaAs Related to Hydrogen
Interpretation of Large Attempt Frequencies in Dissociation of Thermal Donor-Hydrogen Complexes in Silicon
Isotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging Mode
Spectroscopic Identification of a Transition Metal-H Complex in Silicon
Structural Study of Hydrogen Induced Platelet in Si and Ge by Transmission Electron Microscopy
Hydrogen Related Optical Centers in Radiation Damaged Silicon
EPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center Hydrogen
Charge and Site-Change Dynamics of Muonium (Hydrogen) in Si
Photo-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in Silicon
Interaction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic Studies
Depth Distribution of Diffused Hydrogen in n-Type GaAs
Deep Levels of Vanadium- and Chromium-Hydrogen Complexes in Silicon
Deuterium Effusion from InP
Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline Silicon
The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350 degreesC and 500 degreesC
A Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in Silicon
Hydrostatic Pressure Investigations of Metastable Defect States
Vacancy in the EL2 and DX Centers Studied by Positron Annihilation
Theoretical Calculations of Antisite and Antisite-Like Defects in GaP
Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAs
Ordering of the EL2 Defects in the Metastable State
Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions
Direct Evidence for Two-Electron Occupation of Ge-DX Centers in GaAs
Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As
Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices
Ab-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure
Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs
First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs Superlattices
Symmetry of the Acceptor-Like State of the EL2 Defect in the Metastable Configuration
The Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAs
Influence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAs
Electron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2
Pressure Induced *-Shallow - Deep A1 Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAs
Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
Kinetics of Electron Capture on DX Centers under High Pressure
Static and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAs
Vacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy
Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Moessbauer Spectroscopy
Hole Capture by the DX Center in AlGaAs Schottky Barriers
Energy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si
Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAs
Reduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65As
The DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure Effects
Study of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.
On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:Si
Defect Interaction with the Double Donor 77Br in GaAs and InAs
Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?
The Metastable Si:(S + Cu) Defect
The Structure of Au-Li and Pt-Li Complexes in Silicon
The Configurational Change of a Metastable S-Cu Defect in Silicon
A New Bistable Shallow Thermal Donor in Al-Doped Si
Metastable-Defect Behaviors of Iron-Boron Pairs in Silicon
Metastability of the Ali-AlSi Pair in Silicon?
DX-Like Centers in II-VI Diluted Magnetic Semiconductors
Tunneling Study of Metastable Electron States Produced by Reconstructing Impurity Centers in PbTe:In
Passivation and Reactivation of (H,P) Pairs in Si
The Nitrogen Pair in Crystalline Silicon Studied by Ion Channeling
Vacancies and {V,Hn} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties
The Nature of Trigonal Centers in Iron-Doped p-Type Silicon
Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
Relative Stability of HT vs. H* and HT2 vs. H*2 in c-C, Si, Ge and ?-Sn and Their Consequences
On the Pairing between Indium and Carbon Atoms in Silicon
Iron-Phosphorus Interaction in Si
Vacancy-Assisted Diffusion of Si in GaAs: Microscopic Theory
Polarized Photoluminescence in Highly Si-Doped GaAs
Phenomenon of Two-Step Alignment of VGaSnGa Complexes in GaAs under Uniaxial Pressure
Photoexcitation of Defects Related to B in GaAs
Magnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling Diodes
Theoretical Study on the Electronic States of Dislocations and Dislocation Motion in Semiconductors
Ab Initio Cluster Theory of Substitutional Oxygen in Silicon
First-Principles Simulations of Vacancies and Antisites in InP
Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs
Scanning Tunneling Microscopy of Si Donors in GaAs
X-Ray Triple Crystal Diffractometry of Structural Defects in SimGen Superlattices
GIXA, a Novel Technique in Near-Surface Analysis
Electrically Detected Electron Paramagnetic Resonance
Magnetic Resonance Techniques for Excited State Spectroscopy of Defects in Silicon
Optically Detected Cyclotron Resonance for Defect Characterization
Spin Dependent Recombination: An Improved Theory Applied to Deep Centers in Silicon
Contactless Photothermal Ionization Spectroscopy of Shallow Defects in Semiconductors
Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon
Detection of Nonradiative Transition in P++ Ion Implanted p-Si by a Photoacoustic Spectroscopy
DLTS of Recombination Centres in Semiconductors
Raman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose Rate
A Model for Anharmonic Vibrational Excitation of -Bond-Interstitial Impurities in Si and Ge Crystals
Reactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: Si
Defect Concentration Gradients at Semiconductor Junctions
Diffusion of Mn-Atoms during the Growth of CdTe-MnTe Superlattices
Particularities of the Zn Diffusion into InGaAsP from Spin-On Polymer Films
U-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam Doping
Zinc Diffusion in Gallium Antimonide
Evidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance Spectroscopy
Influence of Spatial Coulomb Potential Fluctuations on the Mobility in AlxGa1-xAs with DX Centers
Impurity Self-Screening
Defects and Recombination in Disordered Silicon
Optically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous Silicon
The Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous Silicon
Association of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-Si
Electrical Characterization of Surface Defects on Porous p-Type Silicon
Luminescence due to Oxygen Induced Chemical Confinment on a Silicon Surface
Defects in As-Prepared and Thermally Oxydized Porous Silicon
Carbon as a Probe of Edge-Defined Film-Fed Growth Silicon
Luminescence Associated with Rod-Like Defects in Czochralski Silicon
Phase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect Formation
Au-Related Deep States in the Presence of Extended Defects in N-Type Silicon
Interaction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-Si
Control of Size and Density of Stacking Fault in Silicon by Gold Diffusion
On the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown Silicon
Implantation of Carbon in GaAs and Compensating Native Defects
The Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional Structures
Deep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well Laser
Influence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling Diode
Electronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAs
Influence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAs
Dislocation-Induced Defect Levels in Silicon
Structure Investigations of Heteroepitaxial CoSi2/Si Layers Formed by Ion Implantation
Oxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron Annihilation
Relation between Dislocation Motion and Formation of Intrinsic Point Defects
The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) Substrates
Characterization of EL2 in Annealed LT-GaAs
Theory of Dislocations in GaAs
Electrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si Substrates
Strain and Relaxation in ZnSe/CdSe Superlattices
Strain Induced Islanding of EuTe Epitaxial Films Observed by In-Situ-Rheed and STM Investigations
Influence of Oxygen on External Phosphorus Gettering in Disordered Silicon Wafers
Binding of Copper to Nanocavities in Silicon
Phosphorus Diffusion Gettering of Gold in Silicon
The Diffusion of Gold during the Gettering Influence of Phosphorus
Effect of Interfacial Hydrogen in CoSi2/Si(100) Schottky-Barrier Contacts
EPR Study of Platinum-Hydrogen Complexes in Silicon