Properties of Silicon Carbide
Published on 31. August 1995
Book
Hardback
300 pages
978-0-85296-870-3 (ISBN)
Description
An overview of current SiC research, which covers basic physical properties, optical properties, spectroscopic characterization, defects, the diffusion of impurities, etching, selective doping and crystal growth, microstructure, electronic properties and SiC-based devices.
More details
Series
Language
English
Place of publication
Stevenage
United Kingdom
Target group
College/higher education
Professional and scholarly
Illustrations
50figs.
Dimensions
Height: 234 mm
Width: 156 mm
ISBN-13
978-0-85296-870-3 (9780852968703)
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Schweitzer Classification
Content
Basic physical properties; optical and paramagnetic properties; carrier properties and band structure; energy levels; surface structure, metallization and oxidation; etching; diffusion of impurities and ion implantation; bulk and epitaxial growth; contacts and junctions; Schottky diodes, transistors and optoelectronic devices.