The Physics of Submicron Structures
Published on 1. October 1984
Book
Hardback
370 pages
978-0-306-41715-3 (ISBN)
Description
Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi- tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function.
The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro- ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup- port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi- tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function.
The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro- ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup- port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro- ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup- port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi- tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function.
The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro- ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup- port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
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Language
English
Place of publication
United States
Publishing group
Springer Science+Business Media
Target group
Professional and scholarly
Illustrations
biography
Weight
828 gr
ISBN-13
978-0-306-41715-3 (9780306417153)
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The Physics of Submicron Structures
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The Physics of Submicron Structures
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Content
Quantum-Well and Superlattice Lasers: Fundamental Effects.- n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties.- Tunneling Phenomena in Multibarrier Structures.- Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier.- Two-Dimensional Electron GAS FET (TEGFET).- Physics and Modeling Considerations for VLSI Devices.- Design Considerations for Submicron-Scale GaAs MESFETs.- Millimeter IMPATT Diodes.- A Dynamic Monte Carlo Simulation of Conduction in Submicron GaAs Devices at 77K.- Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels.- Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique.- Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET.- Generation of Interface States and Charge Trapping in MOSFETs.- High Field Surface Drift Velocities in Silicon.- Phonons in Confined Geometries.- Monte Carlo Simulation of Space-Charge Injection FET.- Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices.- Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures.- Electron Distribution Function in GaAs for High and Low Electric Fields.- Monte Carlo Simulations of Ballistic Structures.- Noise Considerations in Submicron Devices.- Ballistic Transport and Velocity Overshoot in Photoconductive Submicron Structures.- Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements.- Radiative Decay of Surface Plasmons on Nonspherical Silver Particles.- A Jet-Stream Solution for the Current In Planar-Doped-Barrier Devices.- The Validity of the Drift-Diffusion Equation in Small Semiconductor Devices.- High-Field Transport in GaAs, InP and InxGa1-xAsyP1-y.- Proposal for a Terahertz Zener Oscillator.- Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays.- A Wigner Function Approach to Transport and Switching in Sub-Micron Heterostructures.- The Electron Diffusion Transistor (A Proposed New Transistor Structure).- Point Contact Spectroscopy of Scattering Rates on Semiconductors.- Lateral Superlattices for MM-Wave and Microelectronic Applications.- Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon.- Generalized Semiconductor Device Modeling Based on Maxwell Theory and Stream Functions.- Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs.- Multi-Layered Heterojunction Structure for Millimeter Wave Sources.- Boundary Scattering Effects in High Field Transport in Submicron Structures.- Ballistic and Dissipative Effects in Barrier-Limited Current Transport.- Contributors.