Epitaxial Microstructures: Volume 40
Volume 40
Arthur C. Gossard(Editor)
Academic Press
Published on 15. September 1994
Book
Hardback
426 pages
978-0-12-752140-4 (ISBN)
Description
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.
More details
Series
Language
English
Place of publication
San Diego
United States
Publishing group
Elsevier Science Publishing Co Inc
Target group
Professional and scholarly
Electrical engineers, semiconductor device engineers, condensed matter physicists, and materials scientists, as well as students, academics, researchers and libraries.
Dimensions
Height: 229 mm
Width: 152 mm
Weight
750 gr
ISBN-13
978-0-12-752140-4 (9780127521404)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

E-Book
05/2014
Academic Press
€54.95
Available for download
Persons
Volume editor
University of California
Series Editor
Content
E. Schubert, Delta-Doping of Semiconductors: Electronic, Optical, and Structural Properties of Materials and Devices. A. Gossard, M. Sundaram, and P Hopkins, Wide Graded Potential Wells. P. Petroff, Direct Growth of Nanometer Size Quantum Wire Superlattices. E. Kapon, Lateral Patterning of Quantum Well Heterostructures by Growth of Nonplanar Substrates. H. Temkin, D. Gershoni, and M. Panish, Optical Properties of Ga1-xInxAs/InP Quantum Wells.