September 16

Frontmatter -- Nina Aleksandrovna Goryunova -- Contents -- Review Article -- Correlations between Active and Passive Parameters of Solid State Laser Media (II) -- Original Papers -- The Validity of Matthiessen's Rule in Dilute Al Alloys in the Vicinity of Room Temperature -- Radiation Defects in Fast-Neutron Irradiated High-Purity Silicon -- Propriétés photoélectriques de cellules au sulfure de cadmium en fonction du dopage -- Peculiarities in the Structure and Origin of Localized States Responsible for the Photoelectret State in A VB3VII-Type Layer Crystals -- Effect of Atomic Hydrogen and Oxygen on Changes in the Surface Conductance and Work Function of the Clean (111) Germanium Surface -- Absorption optique de l'arseniure de gallium de type n entre 0,6 et 1,3 eV -- Point Defect Associates and Inhomogeneity Effects in Deformed Germanium -- Electron Emission from Heterogeneous Metal Surfaces -- Frequency Dependence of the Conductivity in Monocrystalline Selenium -- The Influence of Domain Wall Bowing on Eddy Current Drag -- Ion Bombardment of H.C.P. and F.C.C. Cobalt in the Electron Microscope -- The Characteristics of the 0.93 to 1.0 eV Luminescence Bands in GaAs -- Properties of Self-Ion Irradiated Thin Films -- Thermal Conductivity of Triglycine Sulfate near the Curie Point -- Cathodochromic and Photochromic Alkali Halide Crystals for Optical Information Storage -- On the Dynamical Behaviour of Weakly Doped Photosensitive Crystals -- Change of Magnetic Reversal in Exchange Coupled Magnetic Films -- Gleichstromkennlinien und Schaltverhalten bei ortsabhängiger Lebensdauer -- Precipitation of Impurities into Silicon -- Intermetallic Compounds of Rare Earth Elements and Ni, Co, or Fe -- Experimental Proof that the Generation of Periodic Transients in ß-Carotene Single Crystals, under the Influence of Applied Electric Fields, is a Bulk Phenomenon -- Précipitation de titane dans le système titane-carbone-oxygène -- Phase Transition in Divalent Metal Dicalcium Propionates Substituted Partially by Acetate Ions -- Doping Dependence of the Internal Quantum Efficiency of Spontaneous Electron-Hole Recombination in n-Type Samples of GaAs Excited by a 30 kV Electron Beam at 300 °K -- Electroluminescence in ZnO Electroluminophor Systems -- The Growth Mechanism of Precipitates in Al-Mg-Si Alloys -- Anomalous Electrical and Magnetic Changes in Cu-Cr Base Alloys during Precipitation -- Temperature Dependence of the Plow Stress in Secondary Glide Planes of Cadmium Single Crystals -- Anomalous Photovoltage in Insulating GaSe Crystals -- Influence of External Perturbations on the Behaviour of Stationary Electrical Domains in Gold-Doped n-Type Ge -- Compression of Corundum Single Crystals at Elevated Temperatures -- On the Structure of Internally Oxidized Alloys -- Erratum -- Erratum -- Short Notes -- Introduction -- Weak Beam Observation of Dislocation Loops in Silicon -- Grain Boundary Diffusion of Molybdenum in Tungsten -- On the Formation of Thin Film Single Crystals of Gadolinium Monoxide -- Electrical Properties of n-CdSnP2- p-Cu2S Heterojunctions -- Influence of the Second Harmonic on the Acousto-Electric Gain in Piezoelectric Semiconductors1 -- Thin Film MIS Varactor -- Photoluminescence in y -Irradiated Vitreous and Monocrystalline As2S3 and As2Se3 -- Activation Energy for the Motion of Dislocations in Molybdenum -- Matteucci Effect in Ni3Mn -- Magnetostriction from Tetrahedral Site Ni2+Ions in NiFe2O4 Crystals -- Average Magnetization of Fe-Al Alloys -- Thermal Conductivity of Iron in the Temperature Range from 0. 5 to 1. 3 °K -- Calculation of the Solubility Limits in Dilute Beryllium Alloys -- Magnetic Studies on TbFeAl -- On the Creep of Crystals -- Pre-printed Titles