Handbook of Thin Film Process Technology
Institute of Physics Publishing
1st Edition
Published on 1. January 1995
Book
Hardback
1714 pages
978-0-7503-0833-5 (ISBN)
Article exhausted; check different version
Description
The Handbook of Thin Film Process Technology is a practical handbook for the thin film scientist, engineer and technician. It covers all the most important thin film deposition techniques, as well as important aspects of film processing and the major diagnostic techniques for in-process monitoring. A unique feature of the Handbook is its presentation of recipe-type information (i.e., important deposition system details and process parameters) for a range of common materials and processes.
To allow the Handbook to remain the most up-to-date reference resource in its field, it is packaged in a loose-leaf binder, with additional material published regularly. The purchase price of the print edition includes four supplements from 1996 and 1997 (Thermal Spraying, Surface Modification in Vacuum, Miscellaneous Updates, Superlattices and Multilayered Systems). The 1998 and later supplements can be ordered separately.
To allow the Handbook to remain the most up-to-date reference resource in its field, it is packaged in a loose-leaf binder, with additional material published regularly. The purchase price of the print edition includes four supplements from 1996 and 1997 (Thermal Spraying, Surface Modification in Vacuum, Miscellaneous Updates, Superlattices and Multilayered Systems). The 1998 and later supplements can be ordered separately.
More details
Language
English
Place of publication
London
United Kingdom
Publishing group
Taylor & Francis Ltd
Target group
Professional and scholarly
The Handbook is written at a level suitable for research and development scientists, engineers and technicians working in an industrial environment, or for graduate students and academic researchers interested in the practical aspects of thin film fabrication and processing.
Illustrations
Ill.
ISBN-13
978-0-7503-0833-5 (9780750308335)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
D. Glocker | S. Shah
Handbook of Thin Film Process Technology
Book
12/2001
1st Edition
Taylor & Francis
€635.83
Article exhausted; check different version
Persons
Content
A. Physical Deposition Techniques:
A1: Thermal Evaporation (Coordinating Editors: E B Graper and J Vossen)
A1.0. Introduction and general discussion (E B Graper)
A1.1. Resistance evaporation (E B Graper)
A1.2. Electron beam evaporation (E B Graper)
A1.3. Ion vapour evaporation (E B Graper)
A1.4. Cathodic arc deposition (P J Martin)
A1.5. Laser ablation (A Morimoto and T Shimizu)
A2: Molecular Beam Epitaxy (Coordinating Editors: S A Barnett and J Poate)
A2.0. Introduction and general discussion (S A Barnett and I T Ferguson)
A2.1. Semiconductor growth by metalorganic molecular beam epitaxy (MOMBE) (C R Abernathy)
A2.2. Gas-source MBE (G Y Robinson)
A2.3. Chemical beam epitaxy (T H Chiu)
A2.4. Thin film deposition and dopant incorporation by energetic particle sources (S Strite and H Morkoc)
A3: Sputtering (Coordinating Editors: S I Shah and D Glocker)
A3.0. Introduction and general discussion (S I Shah)
A3.1. Glow discharge sputtering (A S Penfold)
A3.2. Magneton sputtering (A S Penfold)
A3.3. Ion-beam sputtering (T Itoh)
A3.4. Primary ion beam deposition (K Miyake)
A4: Thermal Spray Coatings (Coordinating Editor: R C Tucker Jr)
A4.0. Introduction to thermal spray coatings (R C Tucker Jr)
A4.1. Flame spray (P A Kammer)
A4.2. Plasma spray coatings (R C Tucker Jr)
A4.3. High velocity oxy-fuel coatings (R C Tucker Jr)
A4.4. Detonation gun deposition (R C Tucker Jr)
A4.5. Mechanical, wear, corrosion and other properties of thermal spray coatings (R C Tucker Jr)
B. Chemical Deposition Techniques:
B1: Chemical Vapour Deposition (Coordinating Editor: L Vescan)
B1.0. Introduction and general discussion (L Vescan)
B1.1. Metalorganic chemical vapour deposition (MOCVD) (R D Dupuis)
B1.2. Plasma-enhanced chemical vapour deposition (F Jansen)
B1.3. Photoassisted chemical vapour deposition (S J C Irvine)
B1.4. Thermally activated chemical vapour deposition (L Vescan)
B1.5. Atomic layer epitaxy (T Suntola)
C. Processing Technologies
C1: Pattern transfer (Coordinating Editor: J W Coburn
C1.0. Introduction and general discussion (J W Coburn)
C1.1. Reactive ion etching (C Steinbruchel)
C1.2. Ion-beam-based chemical dry etching (C Steinbruchel)
C1.3. Ion milling (C Steinbruchel)
D. Real-Time Diagnostics
D0: Introduction and General Discussion (Coordinating Editor: R W Collins)
D1: Diagnostic techniques
D1.0. Reflection high-energy electron diffraction as a diagnostic technique (B A Joyce)
D1.1. Low-energy electron diffraction (Sheng-Liang Chang and P A Thiel)
D1.2. Reflection mass spectroscopy (R Kaspi)
D2: Optical Diagnostics
D2.0. Infra-red emission interferometry (A J Springthorpe)
D2.1. Reflectance anisotropy (B Drevillon)
D2.2. Interferometry as an in situ probe during processing of semiconductor wafers (V M Donnelly)
D2.3. Ellipsometry (P Snyder)
D2.4. Photoluminescence (P R Berger)
D2.5. Elastic laser light scattering (B Gallois)
D2.6. Infrared diode laser absorption spectroscopy as a plasma chemical diagnostic (R C Woods)
D3: Plasma Probes
D3.0. Langmuir probe diagnostics (N Hershkowitz)
D3.1. Microwave interferometers (R A Breun)
D3.3. Atomic absorption spectroscopy (Chih-shun Lu)
D4: Other Diagnostics (Coordinating Editor: R Collins)
D4.0. Quartz monitors and microbalances (J Krim and C Daly)
D4.1. Probes of film stress (D Glocker)
E. Surface Modification in Vacuum
E1: Processes for Substrate cleaning: D Mattox
E2: Surface treatment for corrosion and wear protection
E2.1. Material aspects of corrosion protection (Cathy Cotell)
E2.2. Ion implantation with beams (Mike Nastasi)
E2.3. Plasma source ion implantation (Donald Rej)
E3: Surface treatment of polymers for adhesion
E3.0. Plasma sources for polymer surface treatment (M R Wertheimer and Edward Liston)
E3.1. Surface chemistry of treated polymers (Lou Gerenser)
F. Superlattices and Multilayered Systems
F1. Growth phenomenon in superlattices (D Jesson)
F2. Mechanical behaviour in artificially multilayered thin films (R C Cammarata)
F4. Magnetic superlattices (E Fullerton)
F5. Multilayered structures for X-ray mirrors (E Spiller)
F6. Superlattices for optoelectronic applications
F6.1. Si-based superlattices:
F6.1.1 Photonic applications (F Y Huang and B Jalai)
F6.1.2 Compund and alloy semiconductor superlattices (L Salamance-Riba)
X. Materials
X1: Introduction: O Knotek and A Schrey
X1.1. TiN
X1.2. TiAIN
X1.3. TiAIVN
X1.4. CrN
X1.5. ZrN
X1.6. HfN
X1.7. BN
X1.8. Diamond
X1.9. Ni-Cr-B-Si
X1.10. Al-bronze
X1.11. Al2O3-TiO2
X2: Electronic Materials
X2.0. Introduction: K Cadien and S Sivaram
X2.1. GaAs
X2.2. a-Si:H
X2.3. AlGaAs
X2.4. Tellurides
X2.5. CuInSe2
X2.6. Si
X2.7. Ge
X2.8. Si-Ge
X2.9. W
X2.10. GaN
X2.11. AIN
X2.12. ErAs
X2.13. Quaternaries
X2.14. Silicides
X2.15. SiSnC
X2.16. SiN
X3: Optical Materials
X3.0. Introduction: J Targove
X3.1. AIN
X3.2. ZnO
X3.3. PbTiO3
X3.4. KNbO3
X3.5. TiO2
X3.6. In2O3:Sn
X4: Ferroelectric Materials
X4.0. Introduction: M Sayer
X4.1. Bi4Ti3O12
X4.2.LiNbO3 and LiTaO3
X4.3. PbTiO3/PbZrTiO3
X5: Ferromagnetic Materials
X5.0. Introduction: E M T Velu and D N Lambeth
X5.1. CoCr
X5.2. TbFeCo
X5.3. CoPt/CoPd
X5.4. GdTbFe
X6: Superconducting Materials
X6.0. Introduction: J Azoulay
X6.1. NbN
X6.2. YBa2Cu3O7
X6.3. Thallium-based compounds
X6.4. Mercury-based compounds
X7: Miscellaneous Materials
X7.1. PTFE
X7.2. PPN
X7.3. Ir/Pt
Appendix A: List of Contributors
Subject Index
A1: Thermal Evaporation (Coordinating Editors: E B Graper and J Vossen)
A1.0. Introduction and general discussion (E B Graper)
A1.1. Resistance evaporation (E B Graper)
A1.2. Electron beam evaporation (E B Graper)
A1.3. Ion vapour evaporation (E B Graper)
A1.4. Cathodic arc deposition (P J Martin)
A1.5. Laser ablation (A Morimoto and T Shimizu)
A2: Molecular Beam Epitaxy (Coordinating Editors: S A Barnett and J Poate)
A2.0. Introduction and general discussion (S A Barnett and I T Ferguson)
A2.1. Semiconductor growth by metalorganic molecular beam epitaxy (MOMBE) (C R Abernathy)
A2.2. Gas-source MBE (G Y Robinson)
A2.3. Chemical beam epitaxy (T H Chiu)
A2.4. Thin film deposition and dopant incorporation by energetic particle sources (S Strite and H Morkoc)
A3: Sputtering (Coordinating Editors: S I Shah and D Glocker)
A3.0. Introduction and general discussion (S I Shah)
A3.1. Glow discharge sputtering (A S Penfold)
A3.2. Magneton sputtering (A S Penfold)
A3.3. Ion-beam sputtering (T Itoh)
A3.4. Primary ion beam deposition (K Miyake)
A4: Thermal Spray Coatings (Coordinating Editor: R C Tucker Jr)
A4.0. Introduction to thermal spray coatings (R C Tucker Jr)
A4.1. Flame spray (P A Kammer)
A4.2. Plasma spray coatings (R C Tucker Jr)
A4.3. High velocity oxy-fuel coatings (R C Tucker Jr)
A4.4. Detonation gun deposition (R C Tucker Jr)
A4.5. Mechanical, wear, corrosion and other properties of thermal spray coatings (R C Tucker Jr)
B. Chemical Deposition Techniques:
B1: Chemical Vapour Deposition (Coordinating Editor: L Vescan)
B1.0. Introduction and general discussion (L Vescan)
B1.1. Metalorganic chemical vapour deposition (MOCVD) (R D Dupuis)
B1.2. Plasma-enhanced chemical vapour deposition (F Jansen)
B1.3. Photoassisted chemical vapour deposition (S J C Irvine)
B1.4. Thermally activated chemical vapour deposition (L Vescan)
B1.5. Atomic layer epitaxy (T Suntola)
C. Processing Technologies
C1: Pattern transfer (Coordinating Editor: J W Coburn
C1.0. Introduction and general discussion (J W Coburn)
C1.1. Reactive ion etching (C Steinbruchel)
C1.2. Ion-beam-based chemical dry etching (C Steinbruchel)
C1.3. Ion milling (C Steinbruchel)
D. Real-Time Diagnostics
D0: Introduction and General Discussion (Coordinating Editor: R W Collins)
D1: Diagnostic techniques
D1.0. Reflection high-energy electron diffraction as a diagnostic technique (B A Joyce)
D1.1. Low-energy electron diffraction (Sheng-Liang Chang and P A Thiel)
D1.2. Reflection mass spectroscopy (R Kaspi)
D2: Optical Diagnostics
D2.0. Infra-red emission interferometry (A J Springthorpe)
D2.1. Reflectance anisotropy (B Drevillon)
D2.2. Interferometry as an in situ probe during processing of semiconductor wafers (V M Donnelly)
D2.3. Ellipsometry (P Snyder)
D2.4. Photoluminescence (P R Berger)
D2.5. Elastic laser light scattering (B Gallois)
D2.6. Infrared diode laser absorption spectroscopy as a plasma chemical diagnostic (R C Woods)
D3: Plasma Probes
D3.0. Langmuir probe diagnostics (N Hershkowitz)
D3.1. Microwave interferometers (R A Breun)
D3.3. Atomic absorption spectroscopy (Chih-shun Lu)
D4: Other Diagnostics (Coordinating Editor: R Collins)
D4.0. Quartz monitors and microbalances (J Krim and C Daly)
D4.1. Probes of film stress (D Glocker)
E. Surface Modification in Vacuum
E1: Processes for Substrate cleaning: D Mattox
E2: Surface treatment for corrosion and wear protection
E2.1. Material aspects of corrosion protection (Cathy Cotell)
E2.2. Ion implantation with beams (Mike Nastasi)
E2.3. Plasma source ion implantation (Donald Rej)
E3: Surface treatment of polymers for adhesion
E3.0. Plasma sources for polymer surface treatment (M R Wertheimer and Edward Liston)
E3.1. Surface chemistry of treated polymers (Lou Gerenser)
F. Superlattices and Multilayered Systems
F1. Growth phenomenon in superlattices (D Jesson)
F2. Mechanical behaviour in artificially multilayered thin films (R C Cammarata)
F4. Magnetic superlattices (E Fullerton)
F5. Multilayered structures for X-ray mirrors (E Spiller)
F6. Superlattices for optoelectronic applications
F6.1. Si-based superlattices:
F6.1.1 Photonic applications (F Y Huang and B Jalai)
F6.1.2 Compund and alloy semiconductor superlattices (L Salamance-Riba)
X. Materials
X1: Introduction: O Knotek and A Schrey
X1.1. TiN
X1.2. TiAIN
X1.3. TiAIVN
X1.4. CrN
X1.5. ZrN
X1.6. HfN
X1.7. BN
X1.8. Diamond
X1.9. Ni-Cr-B-Si
X1.10. Al-bronze
X1.11. Al2O3-TiO2
X2: Electronic Materials
X2.0. Introduction: K Cadien and S Sivaram
X2.1. GaAs
X2.2. a-Si:H
X2.3. AlGaAs
X2.4. Tellurides
X2.5. CuInSe2
X2.6. Si
X2.7. Ge
X2.8. Si-Ge
X2.9. W
X2.10. GaN
X2.11. AIN
X2.12. ErAs
X2.13. Quaternaries
X2.14. Silicides
X2.15. SiSnC
X2.16. SiN
X3: Optical Materials
X3.0. Introduction: J Targove
X3.1. AIN
X3.2. ZnO
X3.3. PbTiO3
X3.4. KNbO3
X3.5. TiO2
X3.6. In2O3:Sn
X4: Ferroelectric Materials
X4.0. Introduction: M Sayer
X4.1. Bi4Ti3O12
X4.2.LiNbO3 and LiTaO3
X4.3. PbTiO3/PbZrTiO3
X5: Ferromagnetic Materials
X5.0. Introduction: E M T Velu and D N Lambeth
X5.1. CoCr
X5.2. TbFeCo
X5.3. CoPt/CoPd
X5.4. GdTbFe
X6: Superconducting Materials
X6.0. Introduction: J Azoulay
X6.1. NbN
X6.2. YBa2Cu3O7
X6.3. Thallium-based compounds
X6.4. Mercury-based compounds
X7: Miscellaneous Materials
X7.1. PTFE
X7.2. PPN
X7.3. Ir/Pt
Appendix A: List of Contributors
Subject Index