
Group III Nitride Semiconductor Compounds
Physics and Applications
Bernard Gil(Editor)
Oxford University Press
Published on 23. April 1998
Book
Hardback
492 pages
978-0-19-850159-6 (ISBN)
Description
This book was motivated in large part by the tremendous interest shown in nitride semiconductors by the scientific community in recent years. The interest is due to the wide range of commercially viable industrial applications such as visible and ultraviolet optoelectronics. The aim of this book is to elucidate the physics of nitride-based materials and related devices, and to provide to graduate students and young researchers a rapid introduction to this burgeoning field. Chapters of tutorial style are of medium length, and have been commissioned from some of the very best experts on each topic, both from academia and from industry. All aspects arising from the dual challenges of achieving high-quality, single crystal material and engineering optoelectronic devices are addressed. In the first chapters, the reader will learn about the nitrides in the context of other semiconductors, and will be exposed to the methods used to grow these materials. The chapters which follow discuss the materials' performance from the point of view of electronic transport, optical and structural properties. Finally, an extensive review of device applications is provided in the area of modern transistors, ultraviolet detectors and light emitters.
Reviews / Votes
...the book succeeds well in its aim of providing an informed survey of the rapidly developing topic of the nitride semiconductors, at an expository level suited both to those entering the field from other semiconductor areas and to those already in the field. * John W. Allen, High Temperatures-High Pressures, 1998 *More details
Series
Language
English
Place of publication
Oxford
United Kingdom
Target group
Professional and scholarly
Illustrations
4 plates, halftones, numerous line figures, graphs
Dimensions
Height: 242 mm
Width: 163 mm
Thickness: 31 mm
Weight
963 gr
ISBN-13
978-0-19-850159-6 (9780198501596)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Person
Bernard Gil, Directeur de Recherche au CNRS, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II, Case courrier 074, F-34095 Montpellier Cedex 5, France, Tel:+33 67 14 39 24, Fax:+33 67 14 37 60, email: gil@ges.univ-montp2.fr (address details of contributors attached)
Editor
Directeur de Recherche, Centre National de la Recherche Scientifique, Groupe d'Etude des SemiconducteursDirecteur de Recherche, Centre National de la Recherche Scientifique, Groupe d'Etude des Semiconducteurs, Universite de Montpellier II, France
Content
1. Beyond silicon: the rise of compound semiconductors ; 2. Deposition and properties of III-nitrides by molecular beam epitaxy ; 3. MOVPE growth of nitrides ; 4. Structural defects and materials performance of the III-V nitrides ; 5. Modulation spectroscopy of the group III nitrides ; 6. Optical properties and lasing in GaN ; 7. Defect spectroscopy in the nitrides ; 8. Electronic and optical properties of GaN based quantum wells ; 9. Transistors and detectors based on GaN related materials ; 10. III-V nitride based short-wavelength LEDs and LDs ; 11. Cubic group III nitrides