Laboratory Explorations to Accompany Microelectronic Circuits
6th Edition
Published on 15. July 2013
Book
Paperback/Softback
112 pages
978-0-19-537873-3 (ISBN)
Description
Designed to accompany Microelectronic Circuits by Adel S. Sedra and Kenneth C. Smith, Laboratory Explorations invites students to explore the realm of real-world engineering through practical, hands-on experiments. Taking a "learn-by-doing" approach, it presents labs that focus on the development of practical engineering skills and design practices. Experiments start from concepts and hand analysis, and include simulation, measurement, and post-measurement discussion components. A complete solutions manual is available to adopting instructors. ---------------~~ FEATURES * Includes clear and concise experiments of varying levels of difficulty * Challenging "Extra Exploration" sections follow each experiment * Each experiment is conveniently designed to fit into a 2- or 3-hour lab period and can be completed using minimal equipment * Also compatible with National Instrument's myDAQ, giving students the opportunity to complete assignments outside of the traditional lab environment ---------------~~ PACKAGING OPTIONS Bundle Laboratory Explorations with Microelectronic Circuits, Sixth Edition, for great savings!
Speak to your Oxford University Press sales representative for more information. PACKAGE 1 Laboratory Explorations + Microelectronic Circuits, 6E Package ISBN: 978-0-19-932924-3 PACKAGE 2 Laboratory Explorations + Microelectronic Circuits, 6E + FREE Added Problems Supplement Package ISBN: 978-0-19-932923-6
Speak to your Oxford University Press sales representative for more information. PACKAGE 1 Laboratory Explorations + Microelectronic Circuits, 6E Package ISBN: 978-0-19-932924-3 PACKAGE 2 Laboratory Explorations + Microelectronic Circuits, 6E + FREE Added Problems Supplement Package ISBN: 978-0-19-932923-6
More details
Edition
6th Revised edition
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Edition type
Revised edition
Dimensions
Height: 254 mm
Width: 203 mm
Weight
10 gr
ISBN-13
978-0-19-537873-3 (9780195378733)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Vincent C. Gaudet is Associate Professor in the Department of Electrical and Computer Engineering at the University of Waterloo. Kenneth C. Smith is Professor Emeritus in Electrical and Computer Engineering, Computer Science, Mechanical and Industrial Engineering, and Information Science at the University of Toronto.
Content
1. LIST OF EXPERIMENTS ; ALL REFERENCES ARE TO MICROELECTRONIC CIRCUITS, SIXTH EDITION, BY ADEL S. SEDRA AND KENNETH C. SMITH ; CHAPTER 2: OPERATIONAL AMPLIFIERS ; LAB 2.1: INVERTING CONFIGURATION ( 2.2 P. 58 S&S) ; LAB 2.2: NON-INVERTING CONFIGURATION ( 2.3 P. 67 S&S) ; LAB 2.3: DIFFERENCE AMPLIFIER ( 2.4 P. 71 S&S) ; LAB 2.4: INSTRUMENTATION AMPLIFIER ( 2.4.2 P. 76 S&S) ; LAB 2.5: LOSSY INTEGRATOR ( 2.5.1-2.5.2 P. 80 S&S) ; LAB 2.6: LOSSY DIFFERENTIATOR ( 2.5.3 P. 87 S&S) ; CHAPTER 4: DIODES ; LAB 4.1: DIODE I-V TRANSFER CURVE ( 4.2 P. 173 S&S) ; LAB 4.2: FUN WITH DIODES I: RECTIFIERS ( 4.5 P. 194 S&S) ; LAB 4.3: FUN WITH DIODES II: LIMITING AND CLAMPING CIRCUITS ( 4.6 P. 207 S&S) ; CHAPTER 5: MOS FIELD-EFFECT TRANSISTORS (MOSFETS) ; LAB 5.1: NMOS I-V CHARACTERISTICS ( 5.1-5.2 P. 232 S&S) ; LAB 5.2: PMOS I-V CHARACTERISTICS ( 5.1-5.2 P. 232 S&S) ; LAB 5.3: NMOS AT DC ( 5.3 P. 258 S&S) ; LAB 5.4: PMOS AT DC ( 5.3 P. 258 S&S) ; LAB 5.5: NMOS COMMON-SOURCE AMPLIFIER ( 5.8.2 P. 316 S&S) ; LAB 5.6: PMOS COMMON-SOURCE AMPLIFIER ( 5.8.2 P. 316 S&S) ; LAB 5.7: NMOS COMMON-SOURCE AMPLIFIER WITH SOURCE DEGENERATION ( 5.8.3 P. 318 S&S) ; LAB 5.8: PMOS COMMON-SOURCE AMPLIFIER WITH SOURCE DEGENERATION ( 5.8.3 P. 318 S&S) ; LAB 5.9: NMOS COMMON-GATE AMPLIFIER ( 5.8.4 P. 318 S&S) ; LAB 5.10: PMOS COMMON-GATE AMPLIFIER ( 5.8.4 P. 318 S&S) ; LAB 5.11: NMOS SOURCE FOLLOWER ( 5.8.5 P. 321 S&S) ; LAB 5.12: PMOS SOURCE FOLLOWER ( 5.8.5 P. 321 S&S) ; CHAPTER 6: BIPOLAR JUNCTION TRANSISTORS (BJTS) ; LAB 6.1: NPN I-V CHARACTERISTICS ( 6.1-6.2 P. 352 S&S) ; LAB 6.2: PNP I-V CHARACTERISTICS ( 6.1-6.2 P. 352 S&S) ; LAB 6.3: NPN AT DC ( 6.3 P. 378 S&S) ; LAB 6.4: PNP AT DC ( 6.3 P. 378 S&S) ; LAB 6.5: NPN COMMON-EMITTER AMPLIFIER ( 6.8.2 P. 455 S&S) ; LAB 6.6: PNP COMMON-EMITTER AMPLIFIER ( 6.8.2 P. 455 S&S) ; LAB 6.7: NPN COMMON-EMITTER AMPLIFIER WITH EMITTER DEGENERATION ( 6.8.3 P. 457 S&S) ; LAB 6.8: PNP COMMON-EMITTER AMPLIFIER WITH EMITTER DEGENERATION ( 6.8.3 P. 457 S&S) ; LAB 6.9: NPN COMMON-BASE AMPLIFIER ( 6.8.4 P. 459 S&S) ; LAB 6.10: PNP COMMON-BASE AMPLIFIER ( 6.8.4 P. 459 S&S) ; LAB 6.11: NPN EMITTER FOLLOWER ( 6.8.5 P. 460 S&S) ; LAB 6.12: PNP EMITTER FOLLOWER ( 6.8.5 P. 460 S&S) ; LAB 6.13: NMOS VS. NPN: COMMON-SOURCE/COMMON-EMITTER AMPLIFIER COMPARISON