Semiconductor Process Reliability in Practice
Published on 16. November 2012
Book
Hardback
624 pages
978-0-07-175427-9 (ISBN)
Description
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Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
Basic device physics
Process flow for MOS manufacturing
Measurements useful for device reliability characterization
Hot carrier injection
Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
Negative bias temperature instability
Plasma-induced damage
Electrostatic discharge protection of integrated circuits
Electromigration
Stress migration
Intermetal dielectric breakdown
Proven processes for ensuring semiconductor device reliabilityCo-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
Basic device physics
Process flow for MOS manufacturing
Measurements useful for device reliability characterization
Hot carrier injection
Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
Negative bias temperature instability
Plasma-induced damage
Electrostatic discharge protection of integrated circuits
Electromigration
Stress migration
Intermetal dielectric breakdown
More details
Language
English
Place of publication
United States
Publishing group
McGraw-Hill Education - Europe
Target group
Professional and scholarly
Illustrations
200 Illustrations
Dimensions
Height: 235 mm
Width: 157 mm
Thickness: 38 mm
Weight
1039 gr
ISBN-13
978-0-07-175427-9 (9780071754279)
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Schweitzer Classification
Persons
Zhenghao Gan is a reliability technical manager at the Semiconductor Manufacturing International Corporation (SMIC), Shanghai, China. He has extensive technical and management experience in research and development of semiconductor reliability improvement, testing/characterization, problem solving, project management, modeling, and analysis.
Waisum Wong, Ph.D., is in charge of process reliability at the Semiconductor Manufacturing International Corporation (SMIC), Shanghai, China. He has extensive experience in power device development and modeling.
Juin J. Liou, Ph.D., is the Pegasus Distinguished Professor and UCF-Analog Devices Fellow in the Department of Electrical and Computer Engineering at the University of Central Florida. He has published eight books and has been awarded more than $9 million in research contracts and grants from federal agencies, state governments, and industry leaders.
Waisum Wong, Ph.D., is in charge of process reliability at the Semiconductor Manufacturing International Corporation (SMIC), Shanghai, China. He has extensive experience in power device development and modeling.
Juin J. Liou, Ph.D., is the Pegasus Distinguished Professor and UCF-Analog Devices Fellow in the Department of Electrical and Computer Engineering at the University of Central Florida. He has published eight books and has been awarded more than $9 million in research contracts and grants from federal agencies, state governments, and industry leaders.