Defects and Diffusion in Semiconductors
An Annual Retrospective VI
1st Edition
Published on 11. November 2003
Book
Paperback/Softback
458 pages
978-3-908450-83-2 (ISBN)
Description
This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).
More details
Series
Edition
1., Aufl.
Language
English
Place of publication
Zurich
Switzerland
Target group
College/higher education
Professional and scholarly
Dimensions
Height: 24.5 cm
Width: 17 cm
Thickness: 23 mm
Weight
1000 gr
ISBN-13
978-3-908450-83-2 (9783908450832)
DOI
10.4028/www.scientific.net/DDF.221-223
Schweitzer Classification
Other editions
Additional editions
Trans Tech Publications Ltd | David J. Fisher
Defects and Diffusion in Semiconductors VI
E-Book
11/2003
Trans Tech Publications Ltd
€211.86
Available for download
Content
Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
New Approach to Capacitance Studies of 'DX' Centers
Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
Modeling of Dopant and Defect Interactions in Si Process Simulators
Spectroscopic Study of Magnesium-Related Impurities in Silicon
Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
In-Diffusion Concentration Profiles of Dopants in Semiconductors
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors
New Approach to Capacitance Studies of 'DX' Centers
Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
Modeling of Dopant and Defect Interactions in Si Process Simulators
Spectroscopic Study of Magnesium-Related Impurities in Silicon
Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
In-Diffusion Concentration Profiles of Dopants in Semiconductors
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors