Materials Analysis by Ion Channeling
Submicron Crystallography
Academic Press
Published on 7. January 1983
Book
Hardback
300 pages
978-0-12-252680-0 (ISBN)
Description
Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
More details
Language
English
Place of publication
San Diego
United States
Publishing group
Elsevier Science Publishing Co Inc
Target group
Professional and scholarly
Scientists and Students .
Dimensions
Height: 229 mm
Width: 152 mm
Weight
680 gr
ISBN-13
978-0-12-252680-0 (9780122526800)
Copyright in bibliographic data is held by Nielsen Book Services Limited or its licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

Leonard C. Feldman | James W. Mayer | Steward T. A. Picraux
Materials Analysis by Ion Channeling
Submicron Crystallography
E-Book
12/2012
Academic Press
€54.95
Available for download
Persons
Author
Bell Laboratories, Murray Hiil, New Jersey
California Institute of Technology
Sandia National Laboratories, Albuquerque, New Mexico
Content
Preface. Acknowledgments. Glossary of Symbols. Introduction. Interaction of Ion Beams with Surfaces. Channeling within the Crystal. Particle Distributions within the Channel. Dechanneling by Defects. Defect Depth Distributions. Surfaces. Surface Layers and Interfaces. Epitaxial Layers. Impurity-Defect Interactions. Appendix A. Atomic Scattering Concepts. Appendeix B: Lecture Notes on Channeling and the Continuum Potential.