Spectroscopy of Semiconductor Microstructures
Published on 3. March 2013
Book
Paperback/Softback
XIV, 667 pages
978-1-4757-6567-0 (ISBN)
Description
IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett.
49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.
49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.
More details
Series
Edition
Softcover reprint of the original 1st ed. 1989
Language
English
Place of publication
New York
United States
Target group
Professional and scholarly
Research
Illustrations
215 s/w Abbildungen
XIV, 667 p. 215 illus.
Dimensions
Height: 254 mm
Width: 178 mm
Thickness: 37 mm
Weight
1264 gr
ISBN-13
978-1-4757-6567-0 (9781475765670)
DOI
10.1007/978-1-4757-6565-6
Schweitzer Classification
Other editions
Additional editions
Gerhard Fasol | Annalisa Fasolino | Paolo Lugli
Spectroscopy of Semiconductor Microstructures
E-Book
06/2013
Springer
€53.49
Available for download
Gerhard Fasol | Annalisa Fasolino | Paolo Lugli
Spectroscopy of Semiconductor Microstructures
Book
03/1990
Kluwer Academic / Plenum Publishers
€85.59
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Content
MBE Growth of Custom-Designed III-V Semiconductor Microstructures Scaled to the Physical Limit: Ultrathin Layer Superlattices and Monolayer Doping.- MOCVD - Grown Atomic Layer Superlattices.- Aspects of the Growth of InP/InGaAs Multi-Quantum Well Structures by Gas Source Molecular Beam Epitaxy.- Quantum Wires and Related Superstructures.- Spectroscopy of One-Dimensional Electronic Systems.- Electrons in Lateral Microstructures on Indium Antimonide.- Ballistic Transport in Quasi-One-Dimensional Structures.- Phonons in Superlattices.- Resonance Raman Scattering in Short Period GaAs - AlAs Superlattices.- Phonons and Optical Properties of Si / Ge Superlattices.- Characterisation of Ge - Si Interfaces and Ultra-thin Ge layers by Raman Scattering.- Phonons of Ideal (001) Superlattices: Application to Si / Ge.- Calculations of Phonons in Superlattices. The Ge / Si Superlattices along [001].- Structural and Optical Properties of Periodic Fibonacci Superlattices.- Raman Scattering from Phonons in Quasiperiodic Superlattices Based on Generalizations of the Fibonacci Sequence.- Can We Tune the Band Offset at Semiconductor Heterojunctions?.- Optical Properties and Band Alignments of III-V Heterostructures.- Indirect GaAs/AIAs Superlattices.- Optical Testing of Probability Densities in Quantum Well Eigenstates.- Photoemission from A1GaAs/GaAs Heterojunctions and Quantum Wells under Negative Electron Affinity Conditions.- Wannier - Stark Quantization and Bloch Oscillator in Biased Semiconductor Superlattices.- Electronic Raman Scattering in Photoexcited Quantum Wells: Field Effects and Charge-Density Domains.- Linear and Nonlinear Optics of Confined Excitons.- Magneto-Excitons in GaAs/GaAlAs Quantum Wells.- Anisotropy of Magneto-Optical Properties of (Al, Ga)As QuantumWells.- Magneto-Optical Study of Miniband Dispersion and Excitonic Effects in GaAs/GaAIAs Superlattices.- Magnetotunnelling in Semiconductor Microstructures.- Properties of a Dense Quasi Two Dimensional Electron-Hole Gas at High Magnetic Fields.- Magneto - Absorption in a Hg1?xXMnxTe - CdTe Superlattice: Evidence of the Exchange Interaction in a Semimagnetic Semiconducting Superlattice.- Polaron Coupling in GaAs - GaA1As Heterostructures observed by Cyclotron and Magnetophonon Resonance.- Cyclotron Resonance of 2D Electron Systems in Intentionally Doped A1GaAs/GaAs Quantum Wells and Heterostructures.- Magnetophonon Resonance Condition in Quasi One- and Two-Dimensional Electron Systems.- Interaction of Surface Acoustic Waves with Two-Dimensional Electron Systems in GaAs/AlGaAs Heterojunctions.- Screening of Impurities in the Quantum Hall Regime.- Ultrafast Luminescence Studies of Tunneling in Semiconductor Microstructures.- Monte-Carlo Simulation of Femtosecond Carrier Relaxation in Semiconductor Quantum Wells.- Ultrafast Transport Measurements in Bulk Semiconductors and Tunneling Devices Using Electro-Optic Sampling.- Optical Transport Experiments in Heterostructures.- Optical Properties of GaAs / AlAs Superlattices.- Hot Phonons in Microstructures.- Contributors.- Participants.