Materials Issues in Novel Si-Based Technology: Volume 686

This book from the Materials Research Society reflects the increasing need for new materials to continue the Moore's Law scaling that has been the backbone of silicon-based semiconductors. The relatively simple physical dimension reduction and optimization of the past is being replaced with increasingly complex implementation of novel materials to achieve the technology scaling. New materials such as strained Si on SiGe, silicon-on-insulator, and high-k dielectrics are now making their way into mainstream CMOS logic technology. Soon, the future of silicon devices will be based not on how well the technology can be made smaller, but on how well new materials can be successfully integrated. Topics include: group-IV alloy and strained materials and devices; advanced CMOS - SOI and vertical devices; silicon-based substrates and device processing; MILC materials growth for CMOS and TFT; nanocrystal memories; growth of nanostructured materials; nanoscale devices; nanostructures; and advanced CMOS gate stacks and metallization.
 
This book from the Materials Research Society reflects the increasing need for new materials to continue the Moore's Law scaling that has been the backbone of silicon-based semiconductors. The relatively simple physical dimension reduction and optimization of the past is being replaced with increasingly complex implementation of novel materials to achieve the technology scaling. New materials such as strained Si on SiGe, silicon-on-insulator, and high-k dielectrics are now making their way into mainstream CMOS logic technology. Soon, the future of silicon devices will be based not on how well the technology can be made smaller, but on how well new materials can be successfully integrated. Topics include: group-IV alloy and strained materials and devices; advanced CMOS - SOI and vertical devices; silicon-based substrates and device processing; MILC materials growth for CMOS and TFT; nanocrystal memories; growth of nanostructured materials; nanoscale devices; nanostructures; and advanced CMOS gate stacks and metallization.