
Materials Issues in Novel Si-Based Technology: Volume 686
Cambridge University Press
Published on 5. June 2014
Book
Paperback/Softback
296 pages
978-1-107-41213-2 (ISBN)
Description
This book from the Materials Research Society reflects the increasing need for new materials to continue the Moore's Law scaling that has been the backbone of silicon-based semiconductors. The relatively simple physical dimension reduction and optimization of the past is being replaced with increasingly complex implementation of novel materials to achieve the technology scaling. New materials such as strained Si on SiGe, silicon-on-insulator, and high-k dielectrics are now making their way into mainstream CMOS logic technology. Soon, the future of silicon devices will be based not on how well the technology can be made smaller, but on how well new materials can be successfully integrated. Topics include: group-IV alloy and strained materials and devices; advanced CMOS - SOI and vertical devices; silicon-based substrates and device processing; MILC materials growth for CMOS and TFT; nanocrystal memories; growth of nanostructured materials; nanoscale devices; nanostructures; and advanced CMOS gate stacks and metallization.
More details
Series
Language
English
Place of publication
Cambridge
United Kingdom
Target group
College/higher education
Professional and scholarly
Product notice
Paperback (trade)
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 16 mm
Weight
400 gr
ISBN-13
978-1-107-41213-2 (9781107412132)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Editor
IBM T J Watson Research Center, New York
Princeton University, New Jersey
Hong Kong University of Science and Technology
Cornell University, New York
Hiroshima University, Japan