Oxide Reliability: A Summary Of Silicon Oxide Wearout, Breakdown, And Reliability
Will be published approx. on 28. January 2002
Book
Hardback
280 pages
978-981-02-4842-0 (ISBN)
Description
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
More details
Series
Language
English
Place of publication
Singapore
Singapore
Target group
College/higher education
Professional and scholarly
ISBN-13
978-981-02-4842-0 (9789810248420)
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Schweitzer Classification
Person
Content
Oxide wearout, breakdown, and reliability, D.J. Dumin; reliability of flash nonvolatile memories, N. Mielke and J. Chen; physics and chemistry of intrinsic time-dependent dielectric breakdown in SiO2 dielectrics, J.W. McPherson; breakdown modes and breakdown statistics of ultrathin SiO2 gate oxides, J. Sune et al; MOSFET gate oxide reliability - anode hole injection model and its applications, Y.-C. Yeo et al.