Charge-Trapping Non-Volatile Memories
Volume 2--Emerging Materials and Structures
Published on 13. July 2018
Book
Paperback/Softback
V, 211 pages
978-3-319-83999-8 (ISBN)
Description
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;Details new architectures and current modeling concepts for non-volatile memory devices;Focuses on conduction through multi-layer gate dielectrics stacks.
More details
Edition
Softcover reprint of the original 1st ed. 2017
Language
English
Place of publication
Cham
Switzerland
Publishing group
Springer International Publishing
Target group
Professional and scholarly
Illustrations
117 farbige Abbildungen, 53 s/w Abbildungen
V, 211 p. 170 illus., 117 illus. in color.
Dimensions
Height: 235 mm
Width: 155 mm
Thickness: 13 mm
Weight
341 gr
ISBN-13
978-3-319-83999-8 (9783319839998)
DOI
10.1007/978-3-319-48705-2
Schweitzer Classification
Other editions
Additional editions
Panagiotis Dimitrakis
Charge-Trapping Non-Volatile Memories
Volume 2--Emerging Materials and Structures
Book
02/2017
Springer
€106.99
Shipment within 10-15 days
Person
Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.
Content
Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.