
Diffusion in Semiconductors
Springer (Publisher)
Published on 18. March 1998
Book
Mixed media product
XIII, 476 pages
978-3-540-60964-3 (ISBN)
No shipping information available
Description
Subvolume A of two subvolumes on
Diffusion in Semiconductors
and Non-Metallic Solids
consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys, diffusion in compound semiconductors, diffusion in silicides, chemical diffusion in bulk inhomogeneous semiconductors, grain-boundary and dislocation diffusion in semiconductors and silicides and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included here because a number of them have become integrated in the Si technology and because they were not covered in the previous volume III/26 on diffusion in metallic substances. Subvolume A contains a CD-ROM.
More details
Series
Edition
1998 ed.
Language
English
Place of publication
Berlin
Germany
Publishing group
Springer Berlin
Target group
Professional and scholarly
Research
Illustrations
XIII, 476 p. With CD-ROM.
Dimensions
Height: 27 cm
Width: 19.3 cm
Weight
1540 gr
ISBN-13
978-3-540-60964-3 (9783540609643)
DOI
10.1007/b53031
Schweitzer Classification
Persons
Content
From the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusion