Rare-Earth Doping of Advanced Materials for Photonic Applications - 2011: Volume 1342
Published on 28. November 2011
Book
Hardback
132 pages
978-1-60511-319-7 (ISBN)
Description
Symposium V, 'Rare-Earth Doping of Advanced Materials for Photonic Applications', Spring Meeting, Materials Research Society, San Francisco, April 25?29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.
More details
Series
Language
English
Place of publication
Warrendale, Pittsburgh
United States
Target group
College/higher education
Professional and scholarly
Illustrations
3 Tables, unspecified; 12 Halftones, unspecified; 63 Line drawings, unspecified
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 9 mm
Weight
350 gr
ISBN-13
978-1-60511-319-7 (9781605113197)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Persons
Content
Part I. ZnO, GaN, Phosphors: 1. Rare earth materials challenge to national defense: material scientist's perspective Shiva Hullavarad; 2. Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxy Atsushi Nishikawa; 3. Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy Shuichi Emura; 4. Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxy Jonathan Poplawsky; 5. Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigation Bertrand Lacroix; Part II. Insulating Materials: Lasers and Phosphors: 6. Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloids Darayas Patel; 7. Preparation of luminescent inorganic core/shell-structured nanoparticles Moritz Milde; 8. Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 ?m optical amplication applications Christophe Galindo; 9. Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+,Eu3+ material Anna Dobrowolska; 10. Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolites Zhenhua Bai; 11. Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applications Miroslaw Batentschuk; 12. Photostimulable fluorescent nanoparticles for biological imaging Andres Osvet; 13. Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substrates Steve Smith; Part III. Rare Earth Ions in Group III - Nitrides: 14. Ultraviolet light emitting devices using AlGdN Takashi Kita; 15. Theoretical investigation of Er-O co-doping in hexagonal GaN Simone Sanna; 16. Photoluminescence of Eu-doped GaN Kevin O'Donnell; 17. Site selective magneto-optical studies of Eu ions in gallium nitride Nathaniel Woodward.