Spin-flip Raman scattering in low-dimensional semiconductors

The challenges for achieving novel spin effects or improving existent spin phenomena are based on interaction, namely interactions between carriers themselves as well as a carrier and a second system, such as the nuclear spin or phonon system leading to a scattering process and thus to spin decoherence. By means of the resonant spin-flip Raman scattering technique fundamental spin interactions of carriers confined in low-dimensional semiconductors, their dependence on the local structure symmetry as well as the type and excitation state of the carrier complex are characterized. It is shown that the scattering processes of the electron, hole, and exciton spins depend on the symmetry of the crystal lattice, quantum confinement potential, and magnetic field confinement.

The studies outline problems of the semiconductor spintronics, but also ways to identify and monitor them, and present a novel quantum dot structure providing a long exciton lifetime and temperature-robust longitudinal spin relaxation time thus making a step toward the realization of spin-based applications.