
Radiation Effects in Advanced Semiconductor Materials and Devices
Published on 1. December 2010
Book
Paperback/Softback
XXII, 404 pages
978-3-642-07778-4 (ISBN)
Description
In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
More details
Series
Edition
Softcover reprint of hardcover 1st ed. 2002
Language
English
Place of publication
Berlin
Germany
Publishing group
Springer Berlin
Target group
Professional and scholarly
Research
Illustrations
XXII, 404 p.
Dimensions
Height: 235 mm
Width: 155 mm
Thickness: 24 mm
Weight
645 gr
ISBN-13
978-3-642-07778-4 (9783642077784)
DOI
10.1007/978-3-662-04974-7
Schweitzer Classification
Other editions
Additional editions

C. Claeys | E. Simoen
Radiation Effects in Advanced Semiconductor Materials and Devices
Book
08/2002
Springer
€246.09
Shipment within 10-15 days
Content
Radiation Environments and Component Selection Strategy.- Basic Radiation Damage Mechanisms in Semiconductor Materials and Devices.- Displacement Damage in Group IV Semiconductor Materials.- Radiation Damage in GaAs.- Space Radiation Aspects of Silicon Bipolar Technologies.- Radiation Damage in Silicon MOS Devices.- GaAs Based Field Effect Transistors for Radiation-Hard Applications.- Opto-Electronic Components for Space.- Advanced Semiconductor Materials and Devices - Outlook.