
Germanium-Based Technologies
From Materials to Devices
Elsevier (Publisher)
Published on 23. March 2007
Book
Hardback
480 pages
978-0-08-044953-1 (ISBN)
Description
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field.
The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.
The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book.
More details
Language
English
Place of publication
Oxford
United Kingdom
Publishing group
Elsevier Science & Technology
Target group
Professional and scholarly
For a wide audience including students, scientists, process engineers, material manufacturers, semiconductor research centres and universities
Product notice
sewn/stitched
Paper over boards
Dimensions
Height: 240 mm
Width: 172 mm
Thickness: 31 mm
Weight
1012 gr
ISBN-13
978-0-08-044953-1 (9780080449531)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions

E-Book
07/2011
Elsevier
€149.00
Available for download
Persons
Eddy Simoen is a Senior Researcher at IMEC, where he is currently involved in research on the defect and strain engineering in high-mobility and epitaxial substrates and defect studies in germanium and III-V compounds.
Editor
Interuniversity MicroElectronics Center (IMEC), Leuven, Belgium and Katholieke Universiteit Leuven, Belgium
Interuniversity Microelectronics Center (IMEC), Leuven, Belgium and Katholieke Universiteit Leuven, Belgium
Content
Introduction (C. Claeys, E. Simoen).
Chapter 1. Germanium Materials (B. Depuyt et al.).
Chapter 2. Grown-in Defects in Ge (J. Vanhellemont et al.).
Chapter 3. Diffusion and Solubility of Dopants in Germanium (E. Simoen, C. Claeys).
Chapter 4. Oxygen in Silicon (P. Clauws).
Chapter 5. Metals in Germanium (E. Simoen, C. Claeys).
Chapter 6. Ab-initio Modelling of Defects in Germanium (R. Jones, J. Coutinho).
Chapter 7. Radiation Performance of Ge Technologies (V. Markevich et al.).
Chapter 8. Electrical Performance of Devices (M. Houssa et al.).
Chapter 9. Device Modeling (D. Esseni et al.).
Chapter 10. Nanoscale Germanium MOS Dielectrics and Junctions (C. On Chui, K.C. Saraswat).
Chapter 11. Advanced Germanium MOS Devices (C. On Chui, K.C. Saraswat).
Chapter 12. Alternative Ge Applications.
Chapter 13. Trends and Outlook (E. Simoen, C. Claeys).
Chapter 1. Germanium Materials (B. Depuyt et al.).
Chapter 2. Grown-in Defects in Ge (J. Vanhellemont et al.).
Chapter 3. Diffusion and Solubility of Dopants in Germanium (E. Simoen, C. Claeys).
Chapter 4. Oxygen in Silicon (P. Clauws).
Chapter 5. Metals in Germanium (E. Simoen, C. Claeys).
Chapter 6. Ab-initio Modelling of Defects in Germanium (R. Jones, J. Coutinho).
Chapter 7. Radiation Performance of Ge Technologies (V. Markevich et al.).
Chapter 8. Electrical Performance of Devices (M. Houssa et al.).
Chapter 9. Device Modeling (D. Esseni et al.).
Chapter 10. Nanoscale Germanium MOS Dielectrics and Junctions (C. On Chui, K.C. Saraswat).
Chapter 11. Advanced Germanium MOS Devices (C. On Chui, K.C. Saraswat).
Chapter 12. Alternative Ge Applications.
Chapter 13. Trends and Outlook (E. Simoen, C. Claeys).