Physics of Quantum Electron Devices

1. Introduction.- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices.- 1.2 Outline of the Book.- References.- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures.- 2.1 Dimensional Confinement and Device Concepts.- 2.2 Molecular Beam Epitaxy.- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth.- 2.4 Quantum Wells: Growth and Photoluminescence.- 2.5 Concluding Remarks.- 2.6 Recent Advances.- References.- 3. Nanolithography for Ultra-Small Structure Fabrication.- 3.1 Overview.- 3.2 Resolution Limits of Lithographic Processes.- 3.3 Pattern Transfer.- References.- 4. Theory of Resonant Tunnelling and Surface Superlattices.- 4.1 Tunnelling Probabilities.- 4.2 Tunnelling Time.- 4.3 Pseudo-Device Calculations.- 4.4 Lateral Superlattices.- References.- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields.- 5.1 Background.- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures.- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP Structures Grown by MBE and MOCVD.- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures.- 5.5 Box Quantised States.- 5.6 Double Barrier Resonant Tunnelling Devices.- References.- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices.- 6.1 Speed of Response.- 6.2 Resonant-Tunnelling Oscillators.- 6.3 Self-Oscillating Mixers.- 6.4 Resistive Multipliers.- 6.5 Variable Absolute Negative Conductance.- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor.- 6.7 A Look at Resonant-Tunnelling Theory.- 6.8 Concluding Remarks.- Note Added in Proof.- List of Symbols.-References.- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits.- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices.- 7.2 Application of Resonant Tunnelling: Transistors and Circuits.- References.- 8. Resonant-Tunnelling Hot Electron Transistors (RHET).- 8.1 RHET Operation.- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures.- 8.3 InGaAs-Based Material Evaluation.- 8.4 RHET Technology Using InGaAs-Based Materials.- 8.5 Theoretical Analyses of RHET Performance.- 8.6 Summary.- References.- 9. Ballistic Electron Transport in Hot Electron Transistors.- 9.1 Ballistic Transport.- 9.2 Hot Electron Transistors.- 9.3 Hot Electron Injectors.- 9.4 Energy Spectroscopy.- 9.5 Electron Coherent Effects in the THETA Device.- 9.6 Transfer to the L Satellite Valleys.- 9.7 The THETA as a Practical Device.- References.- 10. Quantum Interference Devices.- 10.1 Background.- 10.2 Two-Port Quantum Devices.- 10.3 Multiport Quantum Devices.- Appendix: Aharonov - Bohm Phase-shift in an Electric or Magnetic Field.- References.- Additional References.- 11. Carrier Confinement to One and Zero Degrees of Freedom.- 11.1 Experimental Methods.- 11.2 Discussion of Experimental Results.- 11.3 Conclusions.- References.- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs.- 12.1 Background.- 12.2 MOSFET Length Scales.- 12.3 Special MOSFET Geometries.- 12.4 Strictly 1D Transport.- 12.5 Multichannel Transport (Particle in a Box?).- 12.6 Averaged Quantum Diffusion.- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations).- 12.8 Effect of One Scatterer.- 12.9 Conclusion.- References.