Plasma Deposition of Amorphous Silicon-based Materials
Published on 25. September 1995
Book
Hardback
324 pages
978-0-12-137940-7 (ISBN)
Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced.
Reviews / Votes
The book...provides a very useful outline of the underlying properties, processes as well as their applications. --VACUUMMore details
Series
Language
English
Place of publication
San Diego
United States
Publishing group
Elsevier Science Publishing Co Inc
Target group
Professional and scholarly
Illustrations
index
Dimensions
Height: 229 mm
Width: 152 mm
Weight
631 gr
ISBN-13
978-0-12-137940-7 (9780121379407)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Pio Capezzuto | ARUN Madan
Plasma Deposition of Amorphous Silicon-Based Materials
E-Book
10/1995
Academic Press
€119.00
Available for download
Content
G. Bruno, P. Capezzuto, and G. Cicala, Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects: Some Fundamentals on Plasma Deposition. Chemical Systems for Amorphous Silicon andIts Alloys. Effect of Novel Parameters. Deposition Mechanisms and Controversial Aspects. G. Turban, B. Drevillon, D.S. Mataras, and D.E. Rapakoulias, Diagnostics of Amorphous Silicon (a-Si) Plasma Processes: Optical Diagnostics. Mass Spectrometry and Langmuir Probes. In Situ Studies of the Growth of a-Si:H by Spectroellipsometry. C.M. Fortmann, Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys: General Comments on Amorphous Alloy Growth. Relationship between Mobility and Device Performance. Concepts of Electronic Transport in Amorphous Semiconductors. Summary and Conclusions. J. Perrin, Reactor Design for a-Si:H Deposition: Power Dissipation Mechanisms in SiH4 Discharges. Material Balance and Gas-Phase and Surface Physicochemistry. Concepts of Reactors for a-Si:H Deposition. Summary and Conclusions. A. Madan, Optoelectronic Properties of Amorphous-Silicon Using the Plasma-Enhanced Chemical Vapor Deposition (PECVD) Technique: Effect of the Properties of a-SiH Due to Parametric Variations Using the PECVD Technique. Alternative Deposition Techniques. Surface States, Interface States, and Their Effect on Device Performance. Y. Hamakawa, W. Ma, and H. Okamoto, Amorphous Silicon-Based Devices: Significant Advantages of a-Si in Its Alloys as a New Optoelectronic Material. Progress in Amorphous Silicon Solar Cell Technology. Integrated Photosensor and Color Sensor. Aspects of a-Si Imaging Devices Application. a-Si Electrophotographic Applications. Visible-Light Thin-Film Light-Emitting Diode (TFLED). Subject Index. (Chapter Headings): Chemistry of Amorphous Silicon Deposition Processes: Fundamentals and Controversial Aspects. Diagnostics of Amorphous Silicon (a-Si) Plasma Processes. Deposition Conditions and the Optoelectronic Properties of a-Si:H Alloys. ReactorDesign for a-Si:H Deposition. Optoelectronic Properties of Amorphous Silicon Using the Plasma Enhanced Chemical Vapor Deposition (PECVD) Technique. Amorphous Silicon Based Devices.