Nonvolatile Semiconductor Memory Technology

About the Editors William D. Brown is a university professor and head of the Department of Electrical Engineering at the University of Arkansas. As a Member of the Technical Staff at Sandia Laboratories in Albuquerque, NM, from 1969-1977, Dr. Brown initiated Sandia s research and development effort on metal-nitride-oxide-silicon (MNOS) device technology. After joining the faculty at the University of Arkansas in 1977, his nonvolatile semiconductor memory research concentrated on the synthesis and characterization of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride for application in MNOS and SNOS memory devices. Dr. Brown has served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.

Joe E. Brewer is a Senior Advisory Engineer at the Northrop Grumman Corporation Electronic Sensors and Systems Division located near Baltimore, MD. Throughout his 36-year engineering career, Dr. Brewer has been engaged in the development of state-of-the-art microelectronic technology. He has been both a developer and user of NVSM devices. He has had extensive experiences with MNOS block-oriented devices and storage systems, as well as a variety of SONOS devices. Dr. Brewer has also served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.