C H N and O in SI and Characterization and Simulation of Materials and Processes

This collection of symposia papers is divided into two sections. The first presents a state-of-the-art review of the topic - carbon, hydrogen, nitrogen, and oxygen in silicon and in other elemental superconductors. The second section deals with two areas: advanced instrumentation allowing for direct access to atomic mechanisms; and technological development, which, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturization race, a precise mastery of the microscopic mechanisms.
 
This collection of symposia papers is divided into two sections. The first presents a state-of-the-art review of the topic - carbon, hydrogen, nitrogen, and oxygen in silicon and in other elemental superconductors. The second section deals with two areas: advanced instrumentation allowing for direct access to atomic mechanisms; and technological development, which, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturization race, a precise mastery of the microscopic mechanisms.