Handbook of GaN Semiconductor Materials and Devices
1st Edition
Published on 18. October 2017
Book
Hardback
708 pages
978-1-4987-4713-4 (ISBN)
Description
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.
Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.
Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.
Bo Shen is the Cheung Kong Professor at Peking University in China.
Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.
Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.
Bo Shen is the Cheung Kong Professor at Peking University in China.
More details
Series
Language
English
Place of publication
Bosa Roca
United States
Publishing group
Taylor & Francis Inc
Target group
College/higher education
Illustrations
164 s/w Photographien bzw. Rasterbilder, 301 s/w Zeichnungen
301 Line drawings, black and white; 164 Halftones, black and white
Dimensions
Height: 260 mm
Width: 183 mm
Thickness: 42 mm
Weight
1508 gr
ISBN-13
978-1-4987-4713-4 (9781498747134)
Copyright in bibliographic data and cover images is held by Nielsen Book Services Limited or by the publishers or by their respective licensors: all rights reserved.
Schweitzer Classification
Other editions
Additional editions
Wengang (Wayne) Bi | Haochung (Henry) Kuo | Peicheng Ku
Handbook of GaN Semiconductor Materials and Devices
Book
12/2019
1st Edition
CRC Press
€59.51
Shipment within 15-20 days
Wengang (Wayne) Bi | Haochung (Henry) Kuo | Peicheng Ku
Handbook of GaN Semiconductor Materials and Devices
E-Book
10/2017
1st Edition
CRC Press
€67.49
Available for download
Wengang (Wayne) Bi | Haochung (Henry) Kuo | Peicheng Ku
Handbook of GaN Semiconductor Materials and Devices
E-Book
10/2017
CRC Press
€67.49
Available for download
Persons
Wayne Bi is distinguished chair professor and associate dean in the College of Information and Electrical Engineering, chief scientist in the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China. He earned his PhD in Applied Physics from the University of California, San Diego. He has worked in industry for over two decades including at Hewlett-Packard Laboratory, Agilent Technologies Laboratory, and Philips Lumileds, developing cutting-edge optoelectronic and photonic materials and device structures by molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) with their applications to optoelectronic and electronic devices. Previously he was chief engineer and Vice President of Najing Technology / NNCrystal. Dr. Bi has authored or co-authored over 60 refereed journal publications, and has presented numerous conference talks and is the inventor of twenty patents. He is an elected fellow of the Optical Society of America (OSA).
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master's level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institution of Engineering and Technology (IET), and the Institute of Electrical and Electronics Engineers (IEEE).
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan. He earned his doctorate in the Department of Electrical and Computer Engineering at the University of Illinois at Champaign Urbana. He has supervised over forty PhD and Master's level scientists and engineers and also has extensive industry experience, including at Bell Labs, Lucent Technologies, Agilent Technologies, and LuxNet Corporation. He has worked in the field of III-V optical devices and materials, solid state lighting process development, and fabrication and measurement of quantum devices. He is an associate editor of the IEEE Journal of Selected Topics in Quantum Electronics and Journal of Lightwave Technology. He has published over 300 papers in peer-reviewed journals, and is an elected fellow of SPIE, the Optical Society of America (OSA), the Institution of Engineering and Technology (IET), and the Institute of Electrical and Electronics Engineers (IEEE).
Content
Section I Fundamentals
1 III-Nitride Materials and Characterization
Bo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge
2 Microstructure and Polarization Properties of III-Nitride Semiconductors
Fernando A. Ponce
3 Optical Properties of III-Nitride Semiconductors
Plamen P. Paskov and Bo Monemar
4 Electronic and Transport Properties of III-Nitride Semiconductors
Yuh-Renn Wu
Section II Growth and Processing
5 Growth Technology for GaN and AlN Bulk Substrates and Templates
Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova
6 III-Nitride Metalorganic Vapor-Phase Epitaxy
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications
Shizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi
8 Advanced Optoelectronic Device Processing
Fengyi Jiang
Section III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices
An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang
10 Power Conversion and the Role of GaN
Srabanti Chowdhury
11 Recent Progress in GaN-on-Si HEMT
Kevin J. Chen and Shu Yang
12 Reliability in III-Nitride Devices
Davide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni
Section IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride?Based Blue Light-Emitting Diodes
Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao Wei Sun
14 White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends
Bingfeng Fan, Yi Zhuo, and Gang Wang
15 Current Status and Trends for Green Light-Emitting Diodes
Junxi Wang, Zhe Liu, and Ning Zhang
16 Ultraviolet Light-Emitting Diodes: Challenges and Countermeasures
Jun Hyuk Park, Jong Won Lee, Dong Yeong Kim, and Jong Kyu Kim
17 InGaN/GaN Quantum Dot Visible Lasers
Thomas Frost, Guan-Lin Su, John Dallesasse, and Pallab Bhattacharya
18 GaN-Based Surface-Emitting Lasers
Kuo-Bin Hong, Shen-Che Huang, Yu-Hsun Chou, and Tien-Chang Lu
Section V Emerging Applications
19 III?V Nitride-Based Photodetection
Chien-Chung Lin, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-Chung (Henry) Kuo, Wei-Chih Lai, and Jinn-Kong Sheu
20 Intersubband Optoelectronics Using III-Nitride Semiconductors
Caroline B. Lim, Akhil Ajay, Jonas Lahnemann, David A. Browne, and Eva Monroy
21 Lighting Communications
Yu-Chieh Chi, Dan-Hua Hsieh, Hao-Chung (Henry) Kuo, Sujie Nakamura,Steve Denbaars, and Gong-Ru Lin
22 III-Nitride Semiconductor Single Photon Sources
Pei-Cheng Ku, Chu-Hsiang Teng, and Hui Deng
1 III-Nitride Materials and Characterization
Bo Shen, Ning Tang, XinQiang Wang, ZhiZhong Chen, FuJun Xu, XueLin Yang, TongJun Yu, JieJun Wu, ZhiXin Qin, WeiYing Wang, YuXia Feng, and WeiKun Ge
2 Microstructure and Polarization Properties of III-Nitride Semiconductors
Fernando A. Ponce
3 Optical Properties of III-Nitride Semiconductors
Plamen P. Paskov and Bo Monemar
4 Electronic and Transport Properties of III-Nitride Semiconductors
Yuh-Renn Wu
Section II Growth and Processing
5 Growth Technology for GaN and AlN Bulk Substrates and Templates
Michael Slomski, Lianghong Liu, John F. Muth, and Tania Paskova
6 III-Nitride Metalorganic Vapor-Phase Epitaxy
Daniel D. Koleske
7 Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications
Shizhao Fan, Songrui Zhao, Faqrul A. Chowdhury, Renjie Wang, and Zetian Mi
8 Advanced Optoelectronic Device Processing
Fengyi Jiang
Section III Power Electronics
9 Principles and Properties of Nitride-Based Electronic Devices
An-Jye Tzou, Chun-Hsun Lee, Shin-Yi Ho, Hao-Chung (Henry) Kuo, and Jian-Jang Huang
10 Power Conversion and the Role of GaN
Srabanti Chowdhury
11 Recent Progress in GaN-on-Si HEMT
Kevin J. Chen and Shu Yang
12 Reliability in III-Nitride Devices
Davide Bisi, Isabella Rossetto, Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni
Section IV Light Emitters
13 Internal Quantum Efficiency for III-Nitride?Based Blue Light-Emitting Diodes
Zi-Hui Zhang, Yonghui Zhang, Hilmi Volkan Demir, and Xiao Wei Sun
14 White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends
Bingfeng Fan, Yi Zhuo, and Gang Wang
15 Current Status and Trends for Green Light-Emitting Diodes
Junxi Wang, Zhe Liu, and Ning Zhang
16 Ultraviolet Light-Emitting Diodes: Challenges and Countermeasures
Jun Hyuk Park, Jong Won Lee, Dong Yeong Kim, and Jong Kyu Kim
17 InGaN/GaN Quantum Dot Visible Lasers
Thomas Frost, Guan-Lin Su, John Dallesasse, and Pallab Bhattacharya
18 GaN-Based Surface-Emitting Lasers
Kuo-Bin Hong, Shen-Che Huang, Yu-Hsun Chou, and Tien-Chang Lu
Section V Emerging Applications
19 III?V Nitride-Based Photodetection
Chien-Chung Lin, Lung-Hsing Hsu, Yu-Ling Tsai, Hao-Chung (Henry) Kuo, Wei-Chih Lai, and Jinn-Kong Sheu
20 Intersubband Optoelectronics Using III-Nitride Semiconductors
Caroline B. Lim, Akhil Ajay, Jonas Lahnemann, David A. Browne, and Eva Monroy
21 Lighting Communications
Yu-Chieh Chi, Dan-Hua Hsieh, Hao-Chung (Henry) Kuo, Sujie Nakamura,Steve Denbaars, and Gong-Ru Lin
22 III-Nitride Semiconductor Single Photon Sources
Pei-Cheng Ku, Chu-Hsiang Teng, and Hui Deng