Solid State Electronic Devices

SYMBOLS; IMPORTANT FORMULAE AND EXPRESSIONS; 1. : ELECTRON DYNAMICS; INTRODUCTION 2; 1.1 CONDUCTION OF ELECTRICITY THROUGH GASES; 1.1.1 GLOW DISCHARGE; 1.2 MOTION OF CHARGED PARTICLE IN ELECTRIC FIELD; 1.2.1 ENERGY ACQUIRED BY ELECTRON; 1.2.2 ELECTRON TRANSIT TIME; 1.3 MOTION OF A CHARGED PARTICLE IN MAGNETIC FIELD; 1.4 MOTION OF CHARGED PARTICLE IN COMBINED ELECTRIC AND MAGNETIC FIELD; 1.5 CATHODE-RAY TUBE; 1.5.1 FOCUSSING WITH ELECTRIC FIELDS; 1.5.2 FOCUSSING WITH MAGNETIC FIELD; 1.5.3 DEFLECTION SYSTEMS; 2. : GROWTH AND CRYSTAL PROPERTIES OF SEMICONDUCTORS; INTRODUCTION; 2.1 SEMICONDUCTOR MATERIALS; 2.2 TYPES OF SOLIDS; 2.3 CRYSTAL LATTICES; 2.3.1 UNIT CELL; 2.3.2 CUBIC LATTICES; 2.3.3 CRYSTAL PLANES AND DIRECTIONS; 2.3.4 DIAMOND LATTICE; 2.4 ATOMIC BONDING; 2.4.1 VAN DER WAALS BOND; 2.4.2 IONIC BOND; 2.4.3 COVALENT BOND; 2.4.4 METALLIC BOND; 2.5 IMPERFECTIONS AND IMPURITIES IN SOLIDS; 2.5.1 IMPERFECTIONS; 2.5.2 IMPURITIES; 2.6 BULK CRYSTAL GROWTH; 2.6.1 STARTING MATERIAL; 2.6.2 SINGLE-CRYSTAL INGOTS; 2.7 EPITAXIAL GROWTH; 2.7.1 VAPOUR-PHASE EPITAXY; 2.7.2 LIQUID-PHASE EPITAXY; 2.7.3 MOLECULAR BEAM EPITAXY; 3. : ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS; INTRODUCTION; 3.1 BONDING FORCE AND FORMATION OF ENERGY BANDS; 3.2 E-K DIAGRAMS; 3.2.1 BAND STRUCTURE MODIFICATION IN SEMICONDUCTORS; 3.4 CHARGE CARRIERS IN SEMICONDUCTORS; 3.4.1 ELECTRONS AND HOLES; 3.4.2 INTRINSIC SEMICONDUCTOR; 3.4.3 EXTRINSIC SEMICONDUCTOR; 3.5 CARRIER CONCENTRATIONS IN SEMICONDUCTORS; 3.5.1 FERMI LEVEL; 3.5.2 EQUILIBRIUM ELECTRON AND HOLE CONCENTRATIONS; 3.5.3 TEMPERATURE DEPENDENCE OF CARRIER CONCENTRATIONS; 3.5.4 COMPENSATION; 3.6 CARRIER DRIFT; 3.6.1 MOBILITY AND CONDUCTIVITY; 3.6.2 HIGH-FIELD EFFECT; 3.6.3 HALL EFFECT; 3.7 CARRIER DIFFUSION; 3.7.1 DIFFUSION CURRENT DENSITY; 3.7.2 TOTAL CURRENT DENSITY; 3.8 GRADED IMPURITY DISTRIBUTION; 3.8.1 INDUCED FIELD; 3.8.2 EINSTEIN RELATION; 4. : EXCESS CARRIERS IN SEMICONDUCTORS; INTRODUCTION; 4.1 SEMICONDUCTOR IN EQUILIBRIUM; 4.2 EXCESS CARRIER GENERATION AND RECOMBINATION; 4.2.1 OPTICAL ABSORPTION; 4.2.2 EXCESS MINORITY CARRIER LIFETIME; 4.3 CARRIER LIFETIME (GENERAL CASE); 4.3.1 SHOCKLEY-READ-HALL THEORY; 4.3.2 LOW INJECTION; 4.4 DIFFUSION AND RECOMBINATION; 4.4.1 CONTINUITY EQUATION; 4.4.2 HAYNES-SHOCKLEY EXPERIMENT; 4.5 QUASI-FERMI ENERGY LEVELS; 4.6 SURFACE EFFECTS; 4.6.1 SURFACE STATES; 4.6.2 SURFACE RECOMBINATION VELOCITY; 5. : P-N JUNCTION; INTRODUCTION; 5.1 FABRICATION OF P-N JUNCTIONS; 5.1.1 P-N JUNCTION FORMATION; 5.1.2 THERMAL OXIDATION; 5.1.3 DIFFUSION; 5.2 BASIC P-N JUNCTION; 5.2.1 BASIC STRUCTURE; 5.2.2 NO APPLIED BIAS; 5.2.3 BUILT-IN ELECTRIC FIELD; 5.2.4 SPACE-CHARGE REGION WIDTH; 5.3 REVERSE-BIASED P-N JUNCTION; 5.3.1 ENERGY BAND DIAGRAM; 5.3.2 SPACE-CHARGE WIDTH AND ELECTRIC FIELD; 5.3.2 DEPLETION CAPACITANCE; 5.3.4 ONE-SIDED ABRUPT JUNCTION; 5.4 JUNCTIONS WITH NON-UNIFORM DOPING; 5.4.1 LINEARLY GRADED JUNCTIONS; 5.4.2 HYPER-ABRUPT JUNCTIONS; 5.5 VARACTOR DIODE; 5.6 JUNCTION BREAKDOWN; 5.6.1 ZENER BREAKDOWN; 5.6.2 AVALANCHE BREAKDOWN; 5.7 TUNNEL DIODE; 6. : P-N JUNCTION CURRENT; INTRODUCTION; 6.1 P-N JUNCTION CURRENT FLOW; 6.1.1 CHARGE FLOW IN A P-N JUNCTION; 6.1.2 IDEAL CURRENT-VOLTAGE CHARACTERISTICS; 6.1.3 BOUNDARY CONDITIONS; 6.1.4 MINORITY CARRIER DISTRIBUTION; 6.1.5 JUNCTION CURRENT IN IDEAL P-N JUNCTION; 6.1.6 SHORT DIODE; 6.2 SMALL-SIGNAL MODEL OF P-N JUNCTION; 6.2.1 DIFFUSION RESISTANCE; 6.2.2 DIFFUSION CAPACITANCE; 6.2.3 EQUIVALENT CIRCUIT; 6.3 GENERATION-RECOMBINATION CURRENTS; 6.3.1 REVERSE-BIAS GENERATION CURRENT; 6.3.2 FORWARD-BIAS RECOMBINATION CURRENT; 6.3.3 NET FORWARD-BIAS CURRENT; 6.4 JUNCTION DIODE SWITCHING TIMES; 7. : METAL-SEMICONDUCTOR JUNCTIONS AND HETERO-JUNCTIONS; INTRODUCTION; 7.1 METAL-SEMICONDUCTOR CONTACTS; 7.1.1 SCHOTTKY MODEL; 7.1.2 SPACE-CHARGE WIDTH AND JUNCTION CAPACITANCE; 7.1.3 CHARACTERISTICS BASED ON EMISSION MODEL; 7.1.4 SCHOTTKY EFFECT; 7.1.5 TUNNELLING CURRENT; 7.2 EFFECT OF SURFACE STATES AND INTERFACE; 7.3 METAL-SEMICONDUCTOR OHMIC CONTACTS; 7.3.1 SPECIFIC CONTACT RESISTANCE; 7.4 HETEROJUNCTIONS; 7.4.1 ENERGY BAND DIAGRAM; 7.4.2 TWO-DIMENSIONAL ELECTRON GAS; 7.4.3 QUANTUM CONFINEMENT OF CARRIERS; 8. : BIPOLAR JUNCTION TRANSISTORS; INTRODUCTION; 8.1 FUNDAMENTALS OF BIPOLAR JUNCTION TRANSISTORS; 8.2 CURRENT COMPONENTS AND RELATIONS; 8.3 IMPORTANT NOTATIONS AND CONFIGURATIONS; 8.4 BJT CHARACTERISTICS; 8.5 CURRENT GAINS FOR TRANSISTOR; 8.6 MINORITY CARRIER DISTRIBUTION; 8.6.1 BASE REGION; 8.6.2 EMITTER REGION; 8.6.3 COLLECTOR REGION; 8.7 MODELS FOR BIPOLAR JUNCTION TRANSISTORS; 8.7.1 EBERS-MOLL MODEL; 8.7.2 GUMMEL-POON MODEL; 8.7.3 HYBRID-PI MODEL; 8.7.4 H-PARAMETER EQUIVALENT CIRCUIT MODEL; 8.8 IMPORTANT CONFIGURATION OF BJT; 8.8.1 COMMON-EMITTER AMPLIFIER; 8.8.2 COMMON-BASE AMPLIFIER; 8.8.3 COMMON-COLLECTOR AMPLIFIER; 8.9 THERMAL RUNAWAY; 8.10 KIRK EFFECT; 8.11 FREQUENCY LIMITATION FOR TRANSISTOR; 8.12 WEBSTER EFFECT; 8.13 HIGH-FREQUENCY TRANSISTORS; 8.14 SWITCHING CHARACTERISTICS OF BJT; 8.14.1 SCHOTTKY TRANSISTOR; 9. : FIELD-EFFECT TRANSISTOR; INTRODUCTION; 9.1 JUNCTION-FIELD-EFFECT TRANSISTOR; 9.1.1 OPERATING PRINCIPLE; 9.1.2 CURRENT-VOLTAGE CHARACTERISTICS; 9.2 METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; 9.2.1 NORMALLY OFF AND NORMALLY ON MESFETS; 9.2.2 HIGH-ELECTRON-MOBILITY TRANSISTOR; 9.3 BASIC MOS STRUCTURE; 9.3.1 DEPLETION LAYER THICKNESS; 9.3.2 WORK-FUNCTION DIFFERENCE; 9.4 CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOS CAPACITOR; 9.4.1 INTERFACE TRAPS AND OXIDE CHARGE; 9.4.2 EFFECT OF OXIDE CHARGE ON C-V CHARACTERISTICS; 9.5 MOS FIELD-EFFECT TRANSISTOR; 9.5.1 MOSFET CHARACTERISTICS; 9.5.2 SHORT CHANNEL EFFECT; 9.5.3 CONTROL OF THRESHOLD VOLTAGE; 9.5.4 SUBSTRATE BIAS EFFECT; 9.5.5 SUB-THRESHOLD CHARACTERISTICS; 9.5.6 EQUIVALENT CIRCUIT FOR MOSFET; 9.5.7 MOSFET SCALING AND HOT ELECTRON EFFECTS; 9.5.8 DRAIN-INDUCED BARRIER LOWERING; 9.5.9 SHORT CHANNEL AND NARROW WIDTH EFFECT; 9.5.10 GATE-INDUCED DRAIN LEAKAGE; 9.5.11 COMPARISON OF BJT WITH MOSFET; 9.5.12 TYPES OF MOSFET; 10. : OPTO-ELECTRONIC DEVICES; INTRODUCTION; 10.1 OPTICAL ABSORPTION; 10.1.1 OPTICAL ABSORPTION; 10.1.2 EXCESS CARRIER GENERATION RATE; 10.2 PHOTOVOLTAIC CELLS; 10.2.1 P-N JUNCTION SOLAR CELLS; 10.2.2 CONVERSION EFFICIENCY; 10.2.3 EFFECT OF SERIES RESISTANCE; 10.2.4 HETEROJUNCTION SOLAR CELLS; 10.2.5 AMORPHOUS SILICON SOLAR CELLS; 10.3 PHOTODETECTORS; 10.3.1 PHOTOCONDUCTORS; 10.3.2 PHOTODIODES; 10.3.3 PHOTOTRANSISTORS; 10.4 LIGHT-EMITTING DIODES; 10.4.1 LED MATERIALS AND DEVICES; 10.4.2 LOSS MECHANISMS AND STRUCTURE; 10.5 LASER DIODES; 10.5.1 MATERIALS AND STRUCTURES; 10.5.2 POPULATION INVERSION; 11. : POWER DEVICES; INTRODUCTION; 11.1 BIPOLAR POWER TRANSISTORS; 11.1.1 CURRENT CROWDING; 11.1.2 VERTICAL TRANSISTOR STRUCTURE; 11.1.3 TRANSISTOR CHARACTERISTICS; 11.1.4 DARLINGTON PAIR CONFIGURATION; 11.2 POWER MOSFETS; 11.2.1 STRUCTURES; 11.2.2 POWER MOSFET CHARACTERISTICS; 11.3 HEAT SINK; 11.4 SEMICONDUCTOR CONTROLLED RECTIFIER; 11.4.1 FUNDAMENTAL CHARACTERISTICS; 11.4.2 TWO-TRANSISTOR MODEL; 11.4.3 DEPLETION LAYER WIDTH AND EFFECT OF GATE CURRENT; 11.4.4 BIDIRECTIONAL THYRISTORS; 11.5 GATE TURN-OFF THYRISTOR; 11.6 INSULATED-GATE BIPOLAR TRANSISTOR; 11.7 UNIJUNCTION TRANSISTOR; 12. : INTEGRATED CIRCUITS AND MICRO-ELECTROMECHANICAL SYSTEMS; INTRODUCTION; 12.1 PHOTOLITHOGRAPHY; 12.2 ETCHING TECHNIQUES; 12.2.1 WET ETCHING; 12.2.2 DRY ETCHING; 12.3 PASSIVE COMPONENTS; 12.3.1 RESISTORS; 12.3.2 CAPACITORS; 12.3.3 INDUCTORS; 12.4 BIPOLAR TECHNOLOGY; 12.4.1 BASIC PROCESS; 12.4.2 DIELECTRIC ISOLATION; 12.5 MOSFET TECHNOLOGY; 12.5.1 NMOS PROCESS; 12.5.2 NMOS MEMORY DEVICES; 12.5.3 CHARGE-COUPLED DEVICES; 12.5.4 CMOS TECHNOLOGY; 12.6 MESFET TECHNOLOGY; 12.7 MICRO-ELECTROMECHANICAL SYSTEMS; 12.7.1 BASIC PROCESSES; 13. : MICROWAVE DEVICES; INTRODUCTION; 13.1 TYPES OF MICROWAVE DEVICES; 13.2 WORKING PRINCIPLE OF GUNN AND IMPATT DIODES; 13.2.1 GUNN DIODE; 13.2.2 IMPATT DIODE; 13.3 OPERATION OF TRAPATT AND BARITT DIODES; 13.3.1 TRAPATT DIODE; 13.3.2 BARITT DIODE; 14. : RECTIFIERS AND POWER SUPPLIES; INTRODUCTION; 14.1 SINGLE-PHASE RECTIFIERS; 14.1.1 HALF-WAVE RECTIFIER; 14.1.2 FULL-WAVE RECTIFIER; 14.1.3 BRIDGE RECTIFIER; 14.1.4 RIPPLE FACTOR; 14.2 FILTER CIRCUITS; 14.2.1 SHUNT-CAPACITOR FILTER; 14.2.2 ? FILTER; 14.2.3 RC FILTER; 14.3 VOLTAGE REGULATORS; 14.3.1 ZENER DIODE REGULATOR; 14.3.2 SERIES VOLTAGE REGULATOR; 14.4 SWITCHED-MODE POWER SUPPLY; APPENDIX A: IMPORTANT PHYSICAL CONSTANTS; APPENDIX B: IMPORTANT LATTICE CONSTANTS; APPENDIX C: PROPERTIES OF SOME COMMON SEMICONDUCTORS; APPENDIX D: BANDGAPS OF SOME SEMICONDUCTORS RELATIVE TO THE OPTICAL SPECTRUM; APPENDIX E: PROPERTIES OF SILICON, GERMANIUM AND GALLIUM ARSENIDE AT 300 K; APPENDIX F: IMPORTANT PROPERTIES OF SI3N4 AND SIO2 AT 300 K; APPENDIX G: TABLE OF THE ERROR FUNCTION; APPENDIX H: THE PERIODIC TABLE OF ELEMENTS; APPENDIX I: INTERNATIONAL SYSTEM OF UNITS; REFERENCES; INDEX