Group III-Nitrides and Their Heterostructures: Growth, Characterization and Applications

Preface. Deposition and structural properties. Growth of GaN quasi--substrates by hydride vapor phase epitaxy (Wei Zhang and B.K. Meyer). Metalorganic chemical vapor phase epitaxy of gallium--nitride on silicon (A. Dadgar, et al.). Molecular beam epitaxy of cubic III--nitrides on GaAs substrates (D.J. As, et al.). Freestanding GaN--substrates and devices (Claudio R. Miskys, et al.). Surfactants and antisurfactants on group--III--nitride surfaces (J. Neugebauer). Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy (D. Gerthsen, et al.). A theoretical investigation of dislocations in cubic and hexagonal gallium nitride (A.T. Blumenau, et al.). Lattice dynamics in GaN and AIN probed with first--and second--order Raman spectroscopy (U. Haboeck, et al.). Electronic and optical properties. Electronic and vibrational properties of group--III nitrides: Ab initio studies (F. Bechstedt, et al.). Phonons and free--carrier properties of binary, ternary, and quaternary group--III nitride layers measured by Infrared Spectroscopic Ellipsometry (A. Kasic, et al.). Mg in GaN: the structure of the acceptor and the electrical activity (H. Alves, et al.). Local vibrational modes and compensation effects in Mg--doped GaN (A. Hoffmann, et al.). Optical micro--characterization of group--III--nitrides: correlation of structural, electronic and optical properties (J. Christen, et al.). Optical properties of nitride heterostructures (Andreas Hangleiter). The origin of the PL photoluminescence Stokes shift in ternary group--III nitrides: field effects and localization (M. Strassburg, et al.). Devices and device issues. GaN based laser diodes -- epitaxial growth and device fabrication (T. Bottcher, et al.). Optical gain, gain saturation, and waveguiding in group III--nitride heterostructures (M. Rowe, et al.). Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures -- Part B: Sensor applications (M. Eickhoff, et al.). Influence of polarization of the properties of GaN based FET structures (M. Neuburger, et al.). Gallium--nitride--based devices on silicon (A, Dadgar, et al.).