Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2011: Volume 1335

Part I. Low-k Materials: 1. Ultra low-k materials based on self-assembled organic polymers Marianna Pantouvaki; 2. New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores Anthony Grunenwald; 3. Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films Shoko Ono; 4. Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties Hee-Woo Rhee; Part II. Integration: 5. Optimizing stressor film deposition sequence in polish rate order for best planarization John H. Zhang; 6. Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materials Quoc Toan Le; 7. A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices Sven Zimmermann; 8. Defects in low-? insulators (?=2.5-2.0): ESR analysis and charge injection Valeri Afanas'ev; 9. Patterning organic fluorescent molecules with SAM patterns Nan Lu; 10. Optical interconnect technologies based on silicon photonics Wim Bogaerts; Part III. Metallization: 11. 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed Shaoning Yao; 12. Amorphous Ta-N as a diffusion barrier for Cu metallization Neda Dalili; 13. Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering Jon Gudmundsson; 14. Specific contact resistance of ohmic contacts on n-type SiC membranes Patrick Leech; 15. Development of electrochemical copper deposition screening methodologies for next generation additive selection Kevin Ryan; Part IV. 3D Packaging: 16. Microbump impact on reliability and performance in through-silicon via stacks Aditya Karmarkar; 17. Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronics Romain Cauchois.