
Semiconductor Defect Engineering: Volume 994
Materials, Synthetic Structures and Devices II
Cambridge University Press
Published on 5. June 2014
Book
Paperback/Softback
390 pages
978-1-107-40869-2 (ISBN)
Description
This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating lifetime. The concept of defect engineering has found numerous applications in the fabrication of semiconductors and devices with improved and/or new properties, and new trends extend defect engineering in structures with nm dimensions. This book shows interaction among researchers pursing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Topics include: dopant and defect issues in oxide and nitride semiconductors; defect properties, activation and passivation; defects in nanostructures and organic semiconductors; ion implantation and beam processing; defect characterization; heterojunctions and interfaces; process-induced defects; dopants and defects in group-IV semiconductors and defects in devices.
More details
Series
Language
English
Place of publication
Cambridge
United Kingdom
Target group
College/higher education
Professional and scholarly
Product notice
Paperback (trade)
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 20 mm
Weight
520 gr
ISBN-13
978-1-107-40869-2 (9781107408692)
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Schweitzer Classification
Persons
Editor
Pennsylvania State University
Yokohama National University, Japan