
Semiconductor Defect Engineering: Volume 864
Materials, Synthetic Structures and Devices
Cambridge University Press
Published on 5. June 2014
Book
Paperback/Softback
630 pages
978-1-107-40897-5 (ISBN)
Description
This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
More details
Series
Language
English
Place of publication
Cambridge
United Kingdom
Target group
College/higher education
Professional and scholarly
Product notice
Paperback (trade)
Dimensions
Height: 229 mm
Width: 152 mm
Thickness: 32 mm
Weight
830 gr
ISBN-13
978-1-107-40897-5 (9781107408975)
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Schweitzer Classification
Persons
Editor
Pennsylvania State University
National Renewable Energy Laboratory, Golden, Colorado
Shizuoka University, Japan