
Defect and Impurity Engineered Semiconductors and Devices: Volume 378
Materials Research Society (Publisher)
Published on 16. October 1995
Book
Hardback
1082 pages
978-1-55899-281-8 (ISBN)
Description
Defect engineering has come of age. That theme is well documented by both the academic and industrial research communities in this book from MRS. Going beyond defect control, the book explores the engineering of desired properties in semiconductor materials and devices through the deliberate introduction and manipulation of defects and impurities. Papers are grouped around ten distinct topics covering materials, processing and devices. Topics include: grown-in defects in bulk crystals; grown-in defects in thin films; gettering and related phenomena; hydrogen interaction with semiconductors; defect issues in widegap semiconductors; defect characterization; ion implantation and process-induced defects; defects in devices; interfaces, quantum wells and superlattices; and defect properties, reaction, activation and passivation.
More details
Series
Language
English
Place of publication
Warrendale, Pittsburgh
United States
Target group
Professional and scholarly
Illustrations
Worked examples or Exercises
Dimensions
Height: 235 mm
Width: 157 mm
Thickness: 62 mm
Weight
1682 gr
ISBN-13
978-1-55899-281-8 (9781558992818)
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Schweitzer Classification
Persons
Editor
Meijo University, Japan
Pennsylvania State University
Xerox Palo Alto Research Center, Stanford University, California
National Renewable Energy Laboratory, Golden, Colorado