Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use of lasers on silicon for photonic integration. The authors demonstrate the need for efficient laser sources on silicon, motivated by the development of on-board/on-chip optical interconnects and the different integration schemes available. The authors include detailed descriptions of Group IV-based lasers, followed by a presentation of the results obtained through the bonding approach (hybrid III-V lasers). The monolithic integration of III-V semiconductor lasers are explored, concluding with a discussion of the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment.
- Features a clear description of the advantages, drawbacks, and challenges of laser integration on silicon
- Serves as a staple reference in the general field of silicon photonics
- Focuses on the promising developments of hybrid and monolithic III-V lasers on silicon, previously unreviewed
- Discusses the different kinds of cavity geometries benchmarked with respect to their potential integration on silicon in an industrial environment
Charles Cornet received the Ph.D. degree in physics from Institut National des Sciences Appliquées, Rennes, France, in 2006 for his contribution to the understanding of electronic, optical and dynamic properties of coupled self-assembled InAs/InP quantum dots. Since 2007, he is Assistant Professor at FOTON laboratory, specialist of MBE material growth, structural and optical properties of III-V semiconductor nanostructures and devices, and their integration on silicon. In 2014, he received his 'habilitation à diriger les recherches" for his contribution to the development of pseudomorphic integration of III-V semiconductors and devices on silicon, and became head of the 'optical communications: devices and functionalities" research program at FOTON laboratory.