Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor.
Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
||Taylor & Francis Inc
Für höhere Schule und Studium
Höhe: 229 mm
Breite: 152 mm
Sokrates T. Pantelides is presently the McMinn Professor of Physics in the Department of Physics and Astronomy at Vanderbilt University, Nashville, TN. He joined Vanderbilt University as the McMinn Professor of Physics after 20 years at the IBM T.J. Watson Research Center, where he served as a research staff member, manager, senior manager, and program director. He has held a concurrent appointment as Distinguished Guest Scientists at Oak Ridge National Laboratory.
Stefan Zollner is currently the Section Manager for Wireless Technology Analysis at Motorola in Mesa, AZ and an adjunct Professor of Physics at Arizona State University. He joined Motorola in 1997 after five years as Assistant Professor of Physics at Iowa State University and the Ames Laboratory in Ames, Iowa.
1. Band Alignments and Band Gaps in Si 1-x-yGexCy/Si (001) Structures
2. Synthesis and Characterization of Compounds and Alloys in the Ge-C, Si-C, and Si-Ge-C Systems
3. Substitutional Carbon Incorporation and Electronic Characterization of Si1-ycy and Si1-x-yGexCy/Si Heterojunctions
4. Electron Transport in Surface-Channel Strained-Si Mosfets and Modulation-Doped Fets
5. The Effects of Carbon on the Optical and Structural Properties of SiGeC Alloys
6. Microstructure and Electronic Structure of Strain-Relaxed SiGe Films
7. Monte-Carlo Investigations of Group-IV Alloys Containing Carbon
8. Theory of Strain and Electronic Structure of Si1-yCy and Si1-x-yGexCy Alloys
9. Microstructural Development and Raman Studies of Ge-C and Ge-Si-C Alloys Grown by Molecular Beam Epitaxy on Si and Ge Substrates
10. Suppression of Boron Diffusion by Carbon: A New Route for Advanced Heterojunction Bipolar Transistors
11. Raman Characterization of Si/Si1-xGex Epitaxial Structures
12. Optical Properties and Band Structure of Unstrained and Strained Si1-xGex and Si1-x-yGexCy Alloys
13. Photoluminescence and Transport Measurements in Pseudomorphic Si1-yCy and Si1-x-yGeyCy Layers
14. Temperature Dependence of the Optical Spectra of Si1-xGex Alloys
"Abstract-Scitech Book News/September 2002."
Dewey Decimal Classfication (DDC)