The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides.
This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.
Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Properties of Semiconductors and Superlattices.
Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides
Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN
Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures
Chapter Four: Optical Properties of Homeopitaxial GaN
Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells
Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering
Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds
Chapter Eight: Light Emission from Rare Earth Doped GaN
""This essential book...is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors..."
"The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research."
-Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania.."
-Optics & Photonics News, June 2004
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