Tantalum and Niobium-Based Capacitors

Science, Technology, and Applications
 
 
Springer (Verlag)
  • erschienen am 29. August 2018
 
  • Buch
  • |
  • Softcover
  • |
  • 140 Seiten
978-3-319-88500-1 (ISBN)
 
This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc.
Softcover reprint of the original 1st ed. 2018
  • Englisch
  • Cham
  • |
  • Schweiz
Springer International Publishing
  • Für Beruf und Forschung
  • 57 farbige Abbildungen, 30 farbige Tabellen, 52 s/w Abbildungen
  • |
  • 30 Tables, color; 57 Illustrations, color; 52 Illustrations, black and white; XIX, 120 p. 109 illus., 57 illus. in color.
  • Höhe: 235 mm
  • |
  • Breite: 155 mm
  • |
  • Dicke: 7 mm
  • 223 gr
978-3-319-88500-1 (9783319885001)
10.1007/978-3-319-67870-2
weitere Ausgaben werden ermittelt
Yuri P. Freeman is director of advanced research in the Tantalum (Ta) business unit and a member of the Advance Technology Group (ATG) at KEMET Electronics. The ATG is responsible for KEMET's technical strategy, which includes cooperation with Universities on fundamental issues in passive electronic components. Yuri P. Freeman received his Ph.D. in physics of the solid state from Kharkov Technical University (KhTU) in Ukraine. Prior to KEMET, he worked as principal scientist at Elitan, the largest producer in the Soviet Union of Ta and Niobium (Nb) capacitors, and at Vishay Sprague in the USA. Simultaneously with working in industry, he taught "Physics of Electronic Components" in the KhTU and now in the Clemson University in the USA. Yuri P. Freeman has published more than 30 papers and received 26 patents in the field of physics and technology of Ta and Nb-based capacitors.

Introduction.- Chap1: Major Degradation Mechanisms.- Chap2: Basic Technology.- Chap3: Applications.- Conclusion.

This book provides a comprehensive analysis of the science, technology, and applications of Tantalum and Niobium-based capacitors. The author discusses fundamentals, focusing on thermodynamic stability, major degradation processes and conduction mechanisms in the basic structure of Me-Me2O5-cathode (Me: Ta, Nb). Technology-related coverage includes chapters technology chapters on the major manufacturing steps from capacitor grade powder to the testing of finished capacitors. Applications discussed include high reliability, high charge and energy efficiency, high working voltages, high temperatures, etc. The links between the scientific foundation, breakthrough technologies and outstanding performance and reliability of the capacitors are demonstrated. The theoretical models discussed include the thermodynamics of the amorphous dielectrics, conduction mechanisms in metal-insulator-semiconductor (MIS) structures, band diagrams of the organic semiconductors, etc. - Provides a single-source reference to the science, technology, and applications of Tantalum and Niobium-based capacitors;
- Focuses on Polymer Tantalum capacitors, with rapidly growing applications in special and commercial electronics;

- Discusses in detail conduction and degradation mechanisms in amorphous dielectrics and multilayer capacitor structures with amorphous dielectrics, such as metal-insulator-semiconductor (MIS) structures with inorganic and organic semiconductors, as well as MOSFET transistors with high k dielectrics.

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